公开(公告)号：US11328933B2

公开(公告)日：2022-05-10

申请号：US16952086

申请日：2020-11-19

申请人： Tokyo Electron Limited

发明人： Shinya Ishikawa ,  Kenta Ono ,  Masanobu Honda

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3213

摘要： A technique enables etching of a film on a substrate with reduced etching on the surface of a side wall. An etching method includes forming a protective layer on a surface of a side wall defining a recess in a substrate. The protective layer contains sulfur atoms. The etching method further includes etching a film on the substrate to increase a depth of the recess after forming the protective layer.

公开(公告)号：US11651971B2

公开(公告)日：2023-05-16

申请号：US17351549

申请日：2021-06-18

申请人： TOKYO ELECTRON LIMITED

发明人： Kenta Ono ,  Shinya Ishikawa ,  Masanobu Honda

IPC分类号： H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31144 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/31116

摘要： An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.

公开(公告)号：US12112954B2

公开(公告)日：2024-10-08

申请号：US17160780

申请日：2021-01-28

申请人： TOKYO ELECTRON LIMITED

发明人： Maju Tomura ,  Tomohiko Niizeki ,  Takayuki Katsunuma ,  Hironari Sasagawa ,  Yuta Nakane ,  Shinya Ishikawa ,  Kenta Ono ,  Sho Kumakura ,  Yusuke Takino ,  Masanobu Honda

IPC分类号： H01L21/311 ,  H01L21/3205 ,  H01L21/3213

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32055 ,  H01L21/32137 ,  H01L21/32139

摘要： An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

公开(公告)号：US11355350B2

公开(公告)日：2022-06-07

申请号：US17114508

申请日：2020-12-08

申请人： Tokyo Electron Limited

发明人： Shinya Ishikawa ,  Kenta Ono ,  Maju Tomura ,  Masanobu Honda

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  C23C16/24 ,  B05D1/00 ,  C23C16/56 ,  B05D3/14 ,  C23C16/455 ,  H01J37/32

摘要： A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.