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公开(公告)号：US20230141688A1
公开(公告)日：2023-05-11
申请号：US17979291
申请日：2022-11-02
发明人： Ryoji YAMAZAKI
CPC分类号： H01J37/32449 , H01J37/32357 , B23K1/0008 , H01J2237/327 , H01J37/321
摘要： A plasma source comprises a metal member having an inlet and forming a wall that delimits an upstream flow of a processing gas supplied from the inlet, a ceramic member having an outlet and forming a wall that delimits a downstream flow of the processing gas discharged from the outlet, and a power supply device configured to supply a power for plasma generation into a chamber. The chamber includes the metal member and the ceramic member, and is configured to discharge an activated gas generated by producing plasma from the processing gas to the outside of the chamber through the outlet.
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公开(公告)号：US20210225623A1
公开(公告)日：2021-07-22
申请号：US17149150
申请日：2021-01-14
发明人： Ryoji YAMAZAKI , Hiroyuki MIYASHITA , Mikio SATO
摘要： A plasma observation system includes a plasma processing apparatus which includes a processing container in which a substrate is processed with plasma, and a plurality of observation windows each capable of observing an emission state of the plasma in the processing container; and a measuring device including a light receiver configured to receive a plurality of light beams intersecting in the processing container through a plurality of observation windows, and a controller configured to specify an observation point of the plasma and determine a state of the plasma at the observation point based on the plurality of light beams received by the light receiver.
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公开(公告)号：US20170243725A1
公开(公告)日：2017-08-24
申请号：US15435202
申请日：2017-02-16
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/321 , H01J37/3211 , H01J2237/334
摘要： In a plasma processing apparatus, insulating members are horizontally and separately arranged above a mounting unit in a processing chamber. Each insulating member serves as a partition between a vacuum atmosphere in the processing chamber and an external atmosphere of the processing chamber. Antennas are provided on the respective insulating members to generate an inductively coupled plasma. A first processing gas is supplied into the processing chamber and adsorbed onto a substrate on the mounting unit. A second processing gas is turned into a plasma by power supplied from the antennas and is supplied to activate the first processing gas adsorbed onto the substrate or react with the first processing gas adsorbed onto the substrate. The supply of the first processing gas and the supply of the second processing gas are alternately repeated multiple times with a process of evacuating an inside of the processing chamber interposed therebetween.
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