公开(公告)号：US20160379897A1

公开(公告)日：2016-12-29

申请号：US15191599

申请日：2016-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuteru OBARA ,  Koji YOSHII ,  Yuki WADA ,  Hitoshi KIKUCHI

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/46 ,  G01J5/00 ,  C23C16/455 ,  H01L21/02 ,  H01L21/687 ,  G01K13/00 ,  C23C16/40 ,  C23C16/458

CPC classification number: G01J5/0007 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  G01J5/089 ,  G02B26/12 ,  G05D23/1931 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.

Abstract translation: 提供了一种热处理设备，用于通过将基板安装在安装在处理容器中的旋转台的表面上并在旋转台的同时通过加热部分对基板进行加热来在基板上进行预定的成膜处理。 热处理装置包括：接触型的第一温度测量部件，被配置为测量加热部件的温度; 非接触式的第二温度测量部件，被配置为在旋转台旋转的状态下测量安装在旋转台上的基板的温度; 以及温度控制部，其被配置为基于由所述第一温度测量部测量的第一测量值和由所述第二温度测量部测量的第二测量值来控制所述加热部。

公开(公告)号：US20200080895A1

公开(公告)日：2020-03-12

申请号：US16685047

申请日：2019-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuteru OBARA ,  Koji YOSHII ,  Yuki WADA ,  Hitoshi KIKUCHI

IPC: G01J5/00 ,  C23C16/40 ,  C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01L21/687 ,  G05D23/19 ,  H01L21/67 ,  G01J5/08 ,  G02B26/12

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.

公开(公告)号：US20220293439A1

公开(公告)日：2022-09-15

申请号：US17686764

申请日：2022-03-04

Applicant: Tokyo Electron Limited

Inventor： Yuki WADA ,  Junnosuke TAGUCHI ,  Hisashi TAKAHASHI ,  Manabu HONMA

IPC: H01L21/67 ,  H01L21/687 ,  H05B3/00 ,  F27B17/00 ,  F27D5/00 ,  F28F13/00

Abstract: A substrate processing apparatus includes: a rotary table provided in a processing container; a stage provided on the rotary table to place a substrate thereon, and configured to revolve by a rotation of the rotary table; a heater configured to heat the substrate placed on the stage; and a rotation shaft configured to rotate together with the rotary table and support the stage to be rotatable; and a deflector configured to deflect heating light emitted from the heater toward the rotation shaft.

公开(公告)号：US20170003171A1

公开(公告)日：2017-01-05

申请号：US15191602

申请日：2016-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki WADA ,  Koji YOSHII ,  Kazuteru OBARA

IPC: G01J5/00 ,  H01L21/687 ,  H01L21/66 ,  G01J5/10 ,  H01L21/67

CPC classification number: G01J5/0007 ,  G01J5/047 ,  G01J5/0809 ,  G01J2005/0081 ,  H01L21/67248 ,  H01L22/10

Abstract: A temperature measuring method for measuring a temperature in a processing vessel of a semiconductor manufacturing apparatus by a radiation temperature measurement part, which is configured to measure a temperature by detecting infrared rays radiated from an object, includes: detecting infrared rays radiated from a low resistance silicon wafer having a resistivity of 0.02 Ω·cm or less at room temperature (20 degrees C.) by the radiation temperature measurement part.

Abstract translation: 一种用于通过辐射温度测量部分测量半导体制造装置的处理容器中的温度的温度测量方法，其被配置为通过检测从物体辐射的红外线来测量温度，包括：检测从低电阻辐射的红外线 通过辐射温度测量部分在室温（20℃）下具有0.02Ω·cm以下的电阻率的硅晶片。