公开(公告)号：US20210151710A1

公开(公告)日：2021-05-20

申请号：US17130403

申请日：2020-12-22

Applicant: TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Junghwan KIM ,  Hideya KUMOMI

IPC: H01L51/52 ,  H01L51/44 ,  H01L51/50 ,  H01L27/32 ,  H01L51/56

Abstract: A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.

公开(公告)号：US20180374959A1

公开(公告)日：2018-12-27

申请号：US16117761

申请日：2018-08-30

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Toshio KAMIYA ,  Hideya KUMOMI ,  Junghwan KIM ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L23/31

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

公开(公告)号：US20140293683A1

公开(公告)日：2014-10-02

申请号：US13854336

申请日：2013-04-01

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Yutaka MAJIMA ,  Shinya KANO ,  Hideo HOSONO ,  Hideya KUMOMI ,  Ali JAVEY ,  Kuniharu TAKEI

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H03K19/18

CPC classification number: H01L43/08 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/12

Abstract: [PURPOSE]According to the invention there is provided a magneto-resistive effect element having a larger magneto-resistive ratio than in the prior art.[SOLUTION MEANS]The magneto-resistive effect element (10) of the invention has a compound semiconductor layer (11) composed of a compound semiconductor such as InAs, metal layers (12A and 12B) composed of a metal element such as Ni not composing the compound semiconductor, and interlayers (13A and 13B) of NiInAs or the like composed of the constituent elements of the compound semiconductor and a metal element, situated between the compound semiconductor layer and the metal layer. In the magneto-resistive effect element (10) of the invention, application of a magnetic field (50) alters the conductance with respect to the electric current (60) flowing through the metal layer (12B), interlayer (13B), compound semiconductor layer (11), interlayer (13A) and metal layer (12A).

Abstract translation: [目的]根据本发明，提供了一种具有比现有技术更大的磁阻比的磁阻效应元件。 [解决方案]本发明的磁阻效应元件（10）具有由诸如InAs的化合物半导体构成的化合物半导体层（11），由不构成Ni的金属元素构成的金属层（12A和12B） 化合物半导体以及由化合物半导体的构成元素和金属元素构成的NiInAs等的中间层（13A，13B），位于化合物半导体层和金属层之间。 在本发明的磁阻效应元件（10）中，施加磁场（50）相对于流过金属层（12B）的电流（60），中间层（13B），化合物半导体 层（11），中间层（13A）和金属层（12A）。