公开(公告)号：US20180257061A1

公开(公告)日：2018-09-13

申请号：US15760072

申请日：2016-09-15

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Toshiharu YOKOYAMA ,  Masaaki KITANO ,  Hiroshi MIZOGUCHI ,  Takaya OGAWA

IPC: B01J23/63 ,  C01C1/04

CPC classification number: B01J23/63 ,  B01J35/023 ,  B01J37/0081 ,  C01C1/0411 ,  C22C5/04 ,  Y02P20/52

Abstract: The invention provides a Laves phase intermetallic compound having a composition represented by general formula ARu2 (A is Y, Sc, or at least one element selected from lanthanoid elements excluding Ce), the crystallite size thereof being 1 nm to 100 nm; a catalyst including the intermetallic compound as an active ingredient; and a method for producing ammonia using the same.

公开(公告)号：US20200287002A1

公开(公告)日：2020-09-10

申请号：US16878937

申请日：2020-05-20

Applicant: AGC Inc. ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Junghwan Kim ,  Joonho Bang ,  Hideya Kumomi ,  Satoru Watanabe ,  Kazuto Ohkoshi ,  Naomichi Miyakawa ,  Nao Ishibashi ,  Kunio Masumo ,  Nobuhiro Nakamura

IPC: H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  C23C14/34 ,  C23C14/08 ,  C01G19/00 ,  H01J37/34

Abstract: An oxide-based semiconductor compound including metal cations and oxygen, wherein hydride ions H− originally bonded with the metal cations have been replaced with fluorine ions F− and at least one of the fluorine ions F− is bonded with one to three of the metal cations.

公开(公告)号：US20200164348A1

公开(公告)日：2020-05-28

申请号：US16630269

申请日：2018-07-12

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Yutong GONG ,  Jlazhen WU ,  Masaaki KITANO ,  Toshiharu YOKOYAMA ,  Yangfan LU ,  Tiannan YE

IPC: B01J23/83 ,  C01C1/04

Abstract: Provided are an intermetallic compound having high stability and high activity, and a catalyst using the same. A hydrogen storage/release material containing an intermetallic compound represented by formula (1): RTX . . . (1) wherein R represents a lanthanoid element, T represents a transition metal in period 4 or period 5 in the periodic table, and X represents Si, Al or Ge.

公开(公告)号：US20200078771A1

公开(公告)日：2020-03-12

申请号：US16492975

申请日：2018-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Kazuhisa KISHIDA ,  Masaaki KITANO ,  Toshiharu YOKOYAMA

IPC: B01J23/75 ,  B01J23/745 ,  C01C1/04 ,  B01J23/46 ,  B01J35/10 ,  B01J23/755 ,  C01B3/04

Abstract: Provided are a supported metal material showing high catalytic activity, a supported metal catalyst, a method of producing ammonia and a method of producing hydrogen using the supported metal catalyst, and a method of producing a cyanamide compound. The supported metal material of the present invention is a supported metal material in which a transition metal is supported on a support, and the support is a cyanamide compound represented by the following general formula (1); MCN2 (1), wherein M represents a group II element of the periodic table, and the specific surface area of the cyanamide compound is 1 m2g−1 or more.

公开(公告)号：US20220143580A1

公开(公告)日：2022-05-12

申请号：US17433491

申请日：2020-02-26

Applicant: Tsubame BHB Co., Ltd. ,  Tokyo Institute of Technology

Inventor： Yasunori INOUE ,  Munenobu ITO ,  Kazuhisa KISHIDA ,  Hideo HOSONO ,  Masaaki KITANO ,  Toshiharu YOKOYAMA

IPC: B01J23/46 ,  B01J23/02 ,  B01J35/10 ,  B01J37/04 ,  B01J37/00 ,  B01J37/08 ,  B01J37/02 ,  C01C1/04

Abstract: A molded sintered body containing a mayenite type compound, an inorganic binder sintered material, and a transition metal, wherein a content of the inorganic binder sintered material is 3 to 30 parts by mass with respect to 100 parts by mass of the molded sintered body, and the molded sintered body has at least one pore peak in each of a pore diameter range of 2.5 to 20 nm and a pore diameter range of 20 to 350 nm. A method for producing the molded sintered body, including mixing a precursor of a mayenite type compound and a raw material of an inorganic binder sintered material to prepare a mixture; molding the mixture to prepare a molded body of the mixture; firing the molded body to prepare a fired product; and supporting a transition metal on the fired product to produce a molded sintered body.

公开(公告)号：US20220126276A1

公开(公告)日：2022-04-28

申请号：US17506751

申请日：2021-10-21

Applicant: TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Michikazu HARA ,  Hideo HOSONO ,  Masashi HATTORI

IPC: B01J23/46 ,  C01C1/04 ,  B01J31/12 ,  B01J27/12

Abstract: The invention provides a catalyst for ammonia synthesis which has a high ammonia synthesis activity even at a low reaction temperature and a low reaction pressure and shows no decrease in the catalytic activity even when the synthesis reaction is repeated. The catalyst for ammonia synthesis comprises a metal supported material containing a transition metal and a support for supporting the transition metal. The support contains a metal hydride represented by XHn and an F ion. In the formula, X represents at least one kind selected from the group consisting of atoms of Group 2 and Group 3 of the periodic table, and lanthanoid atoms; and n represents a number represented by 2≤n≤3.

公开(公告)号：US20180374959A1

公开(公告)日：2018-12-27

申请号：US16117761

申请日：2018-08-30

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Toshio KAMIYA ,  Hideya KUMOMI ,  Junghwan KIM ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L23/31

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

公开(公告)号：US20180327272A1

公开(公告)日：2018-11-15

申请号：US15774195

申请日：2016-11-09

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Michikazu HARA ,  Masaaki KITANO ,  Hiroshi MIZOGUCHI ,  Toshiharu YOKOYAMA ,  Kyosuke YAMAGATA

IPC: C01C1/04 ,  C01G55/00 ,  B01J37/04 ,  B01J23/46

CPC classification number: C01C1/0411 ,  B01J23/462 ,  B01J23/58 ,  B01J23/63 ,  B01J23/78 ,  B01J23/83 ,  B01J35/002 ,  B01J35/1009 ,  B01J37/04 ,  B01J37/08 ,  B01J37/18 ,  C01C1/04 ,  C01G55/008 ,  C01P2002/70 ,  Y02P20/52

Abstract: The present invention provides a supported metal catalyst, a method for synthesizing ammonia using said catalyst, and a supported metal material in which a transition metal is supported on a support, wherein the support is a metal hydride represented by general formula (1): XHn . . . (1); and in general formula (1), X represents at least one selected from the group consisting of atoms from Groups 2 and 3, and lanthanoid atoms, and n is in a range of 2

公开(公告)号：US20180323313A1

公开(公告)日：2018-11-08

申请号：US16027733

申请日：2018-07-05

Applicant: Japan Science and Technology Agency ,  CANON KABUSHIKI KAISHA ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Masahiro HIRANO ,  Hiromichi OTA ,  Toshio KAMIYA ,  Kenji NOMURA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  C23C14/00 ,  C23C14/34 ,  C23C14/28 ,  C23C14/08

CPC classification number: H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

公开(公告)号：US20170072382A1

公开(公告)日：2017-03-16

申请号：US15123602

申请日：2015-02-12

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Fumitaka HAYASHI ,  Toshiharo YOKOYAMA ,  Masaaki KITANO

IPC: B01J20/04 ,  C01F7/16 ,  C01C1/00

CPC classification number: B01J20/041 ,  B01J20/08 ,  C01C1/006 ,  C01F7/164 ,  C01F7/166 ,  C01P2002/82 ,  C01P2002/86 ,  C01P2006/40

Abstract: The invention related to a material that can stably hold an imide anion (NH2−) therein even in the atmosphere or in a solvent, and a method for synthesizing the material and a use of the material. A mayenite-type compound into which imide anions are incorporated at a concentration of 1×1018 cm−3 or more are provided. The mayenite-type compound can be produced by heating a mayenite-type compound including electrons or free oxygen ions in a cage thereof, in liquefied ammonia at 450 to 700° C. and at a pressure of 30 to 100 MPa. The compound has properties such that active imide anions can be easily incorporated into the compound and the active imide anions can be easily released in the form of ammonia from the compound, and the compound has chemical stability.

Abstract translation: 本发明涉及即使在大气中或在溶剂中也可以稳定地保持其酰亚胺阴离子（NH 2 - ）的材料，以及合成材料的方法和材料的使用。 提供以1×1018cm-3以上的浓度掺入有酰亚胺阴离子的钙铝石型化合物。 钙铝石型化合物可以通过在其笼中在液化氨中在450〜700℃，压力为30〜100MPa下加热包含电子或游离氧离子的钙铝石型化合物来制造。 该化合物具有使得活性酰亚胺阴离子可以容易地掺入化合物中的性质，并且活性酰亚胺阴离子可以容易地从化合物中以氨的形式释放，并且该化合物具有化学稳定性。