公开(公告)号：US20010052316A1

公开(公告)日：2001-12-20

申请号：US09855654

申请日：2001-05-16

申请人： TOSHIBA CERAMICS CO., LTD

发明人： Katsuyuki Iwata ,  Tadashi Ohashi ,  Shuji Tobashi ,  Shinichi Mitani ,  Hideki Arai ,  Hideki Ito

IPC分类号： C30B025/00 ,  C30B023/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C23C16/45521 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/12 ,  C30B25/14

摘要： An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.

摘要翻译： 一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置，以及控制方法 上述装置。 该装置包括用于清洗旋转机械部分内部的净化气体引入管6，用于排出通过吹扫气体导入管引入的气体的净化气体排出管7，设置在净化气体排出管中的压力调节阀41， 用于检测旋转机械部分中的压力的​​压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ，使得旋转机械部分中的压力呈现适当的值。

公开(公告)号：US20020045009A1

公开(公告)日：2002-04-18

申请号：US09921893

申请日：2001-08-06

申请人： TOSHIBA CERAMICS CO., LTD.

发明人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

IPC分类号： C23C016/00 ,  H01L021/336

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/4584 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7null102 to 6.7null103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 minnull1 and at a reaction temperature of from 600null C. to 800null C.

摘要翻译： 一种使用旋转气相薄膜生长装置在气相中化学生长薄膜的方法，该装置通过将气体从上方向下流动到旋转的硅半导体衬底的表面而供给材料气体，以在表面上生长薄膜 的所述硅半导体衬底的化学生长方法中进行薄膜生长反应的方法，其中使用单硅烷气体作为材料气体的有效成分，以在2.7×102的减压下生长薄膜 至6.7×10 3 Pa，所述硅半导体衬底的旋转数为500至2000分钟-1，反应温度为600℃至800℃。

公开(公告)号：US20020009868A1

公开(公告)日：2002-01-24

申请号：US09854672

申请日：2001-05-15

申请人： TOSHIBA CERAMICS CO., LTD.

发明人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Takaaki Honda ,  Hideki Arai ,  Kunihiko Suzuki

IPC分类号： B05C011/02

CPC分类号： C23C16/45502 ,  C23C16/455 ,  C23C16/45576 ,  C23C16/45591 ,  C23C16/4584

摘要： An improved method of growing a thin film in gaseous phase maintaining a uniform thickness and uniform electric properties such as resistivity, etc. over the whole surface of the film, and an apparatus for growing a thin film in gaseous phase adapted to conducting the above method. A method grows the thin film in gaseous phase by flowing down a film-forming reaction gas through plural gas feed ports 1, 2 formed in the top portion of a cylindrical reactor of an apparatus for glowing a thin film in gaseous phase via flow stabilizer plates 3, and bringing the film-forming reaction gas into contact with the wafer substrate A placed on a rotary susceptor 4 disposed on the lower side thereby to grow a thin film on the surface of the substrate, wherein space formed by the inner wall at the top portion of the reactor B and the flow stabilizer plates 3 is sectionalized into plural spatial sections in a concentric manner with the center of the wafer substrate A as nearly a center point, the gas feed ports 1, 2 are arranged to be corresponded to the sections, and at least either the flow rate or the concentration (8, 9) of the film-forming reaction gas fed to any one of the sections is adjusted.

摘要翻译： 一种在气相中生长薄膜的改进方法，在薄膜的整个表面上保持均匀的厚度和均匀的电性能（例如电阻率等），以及用于在适于进行上述方法的气相中生长薄膜的装置 。 一种方法是通过将形成膜的反应气体通过形成在用于通过流动稳定板发泡气相的薄膜的装置的圆筒形反应器的顶部中的多个气体供给口1,2向下流动而在气相中生长薄膜 如图3所示，使成膜反应气体与配置在下侧的旋转基座4上的晶片基板A接触，从而在基板的表面上生长薄膜，由此在内壁形成的空间 反应器B的顶部和流动稳定板3以与晶片基板A的中心同心的多个空间部分分成几乎中心点，气体供给口1,2被布置成对应于 并且调节供给到任何一个部分的成膜反应气体的流速或浓度（8,9）中的至少一个。