公开(公告)号：US20190139981A1

公开(公告)日：2019-05-09

申请号：US16056941

申请日：2018-08-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuhiro Matsuo ,  Akiko Sekihara ,  Akira Takashima ,  Tomonori Aoyama ,  Tatsunori Isogai ,  Masaki Noguchi

IPC: H01L27/11582 ,  H01L29/51

CPC classification number: H01L27/11582 ,  H01L29/40117 ,  H01L29/518

Abstract: A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.

公开(公告)号：US10403642B2

公开(公告)日：2019-09-03

申请号：US16056941

申请日：2018-08-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuhiro Matsuo ,  Akiko Sekihara ,  Akira Takashima ,  Tomonori Aoyama ,  Tatsunori Isogai ,  Masaki Noguchi

IPC: H01L29/792 ,  H01L27/11582 ,  H01L29/51

Abstract: A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.