公开(公告)号：US20170373119A1

公开(公告)日：2017-12-28

申请号：US15465049

申请日：2017-03-21

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Atsushi OGA ,  Mutsumi OKAJIMA ,  Natsuki FUKUDA ,  Takeshi YAMAGUCHI ,  Toshiharu TANAKA ,  Hiroyuki ODE

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/249 ,  H01L27/2454 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/16

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate extending in a first direction and a second direction, the first and second directions intersecting each other; a first wiring line disposed above the semiconductor substrate and extending in the first direction; a second wiring line disposed above the semiconductor substrate and extending in a third direction, the third direction intersecting the first direction and the second direction; a variable resistance film disposed at an intersection of the first wiring line and the second wiring line; a first insulating film disposed aligned with the second wiring line in the first direction; a first film disposed between the first wiring line and the first insulating film; and a second film disposed between the first insulating film and the first film and configured from a material different from that of the first film.