公开(公告)号：US20180006089A1

公开(公告)日：2018-01-04

申请号：US15706598

申请日：2017-09-15

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Natsuki FUKUDA ,  Mutsumi OKAJIMA ,  Atsushi OGA ,  Toshiharu TANAKA ,  Takeshi YAMAGUCHI ,  Takeshi TAKAGI ,  Masanori KOMURA

IPC: H01L27/24 ,  H01L27/11582 ,  H01L27/11578 ,  H01L27/11575 ,  H01L27/11573 ,  H01L27/11556 ,  H01L21/311 ,  H01L27/11551 ,  H01L21/822 ,  H01L21/768 ,  H01L21/3213 ,  H01L29/792 ,  H01L27/1157

CPC classification number: H01L27/2481 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/8221 ,  H01L23/5226 ,  H01L23/5329 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/2454 ,  H01L27/249 ,  H01L29/7926

Abstract: A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film;a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.

公开(公告)号：US20170373119A1

公开(公告)日：2017-12-28

申请号：US15465049

申请日：2017-03-21

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Atsushi OGA ,  Mutsumi OKAJIMA ,  Natsuki FUKUDA ,  Takeshi YAMAGUCHI ,  Toshiharu TANAKA ,  Hiroyuki ODE

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/249 ,  H01L27/2454 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/16

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate extending in a first direction and a second direction, the first and second directions intersecting each other; a first wiring line disposed above the semiconductor substrate and extending in the first direction; a second wiring line disposed above the semiconductor substrate and extending in a third direction, the third direction intersecting the first direction and the second direction; a variable resistance film disposed at an intersection of the first wiring line and the second wiring line; a first insulating film disposed aligned with the second wiring line in the first direction; a first film disposed between the first wiring line and the first insulating film; and a second film disposed between the first insulating film and the first film and configured from a material different from that of the first film.