公开(公告)号：US20190058008A1

公开(公告)日：2019-02-21

申请号：US15909392

申请日：2018-03-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Atsushi YAGISHITA ,  Masakazu GOTO ,  Kanna ADACHI

IPC: H01L27/24 ,  H01L29/786 ,  H01L29/36 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor layer, first gate electrode, second gate electrode, first conductive layer and second conductive layer. The semiconductor layer includes a first side surface, a second side surface, a first end portion, and a second end portion. The first side surface and the second side surface face each other. The first end portion and the second end portion face each other. A first gate insulating layer is provided between the first gate electrode and the first side surface. A second gate insulating layer is provided between the second gate electrode and the second side surface. A first metal oxide layer is provided between the first conductive layer and the first end portion. A second metal oxide layer is provided between the second conductive layer and the second end portion.

公开(公告)号：US20190088792A1

公开(公告)日：2019-03-21

申请号：US15909348

申请日：2018-03-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masakazu GOTO

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/78 ,  H01L27/24

Abstract: An integrated circuit device includes a first wiring, a second wiring, a semiconductor member that is connected between the first and second wirings, an electrode, and an insulating film that is provided between the semiconductor member and the electrode. The semiconductor member includes a first semiconductor portion of a first conductivity type connected to the first wiring, a second semiconductor portion of the first conductivity type, a third semiconductor portion of the first conductivity type, a fourth semiconductor portion of the first conductivity type, a fifth semiconductor portion of a second conductivity type, and a sixth semiconductor portion of the first conductivity type in this order. A first edge of the electrode on a side of the first wiring overlaps the second, third, or fourth semiconductor portions.

公开(公告)号：US20200303400A1

公开(公告)日：2020-09-24

申请号：US16502877

申请日：2019-07-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Fumitaka ARAI ,  Masakazu GOTO ,  Masaki KONDO ,  Keiji HOSOTANI ,  Nobuyuki MOMO

IPC: H01L27/11582 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10 ,  H01L27/1157 ,  H01L27/11573

Abstract: According to one embodiment, a semiconductor memory device includes: a first interconnecting layer; a first signal line; a first memory cell that stores first information between the first interconnecting layer and the first signal line; second to fourth interconnecting layers provided above the first interconnecting layer; fifth to seventh interconnecting layers disposed apart from the second to fourth interconnecting layers; a second signal line coupled to the first signal line; a third signal line coupled to the first and second signal lines and the sixth interconnecting layer; and, first to fifth transistors.

公开(公告)号：US20200066861A1

公开(公告)日：2020-02-27

申请号：US16283601

申请日：2019-02-22

Applicant: Toshiba Memory Corporation

Inventor： Masakazu GOTO

IPC: H01L29/49 ,  H01L23/522 ,  H01L27/12 ,  H01L29/786

Abstract: An integrated circuit device includes a first wiring, a second wiring, a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, an insulating film, and an electrode. The third semiconductor portion is provided between the first semiconductor portion and the second semiconductor portion. The electrode has a first electrode portion and a second electrode portion. The first electrode portion is provided on a part of the third semiconductor portion with the insulating film interposed therebetween. The second electrode portion is electrically connected to the first electrode portion, located adjacent the second semiconductor portion, and provided on another part of the third semiconductor portion with the insulating film interposed therebetween. The second electrode portion has a concentration of at least one of nitrogen, oxygen, carbon, or silicon that is different from that of the first electrode portion.