公开(公告)号：US20200303455A1

公开(公告)日：2020-09-24

申请号：US16559254

申请日：2019-09-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Tomomi FUNAYAMA ,  Hironobu FURUHASHI ,  Kazumasa SUNOUCHI

IPC: H01L27/22 ,  H01L43/02 ,  H01L45/00 ,  G11C11/16 ,  H01F10/32

Abstract: A nonvolatile storage device includes first and second interconnections and a memory cell between the first and second interconnections. The memory cell includes a storage element, a first switch, and a second switch. The first switch has two terminals and transitions from an off-state to an on-state when a first threshold voltage is applied between its terminals and then voltage between the terminals falls to a first hold voltage. The second switch has two terminals and transitions from an off-state to an on-state when a second threshold voltage is applied between its terminals and then voltage between the terminals falls to a second hold voltage. An off-current of the first switch is less than an off-current of the second switch. The first threshold voltage is greater than the second threshold voltage, which is greater than the first hold voltage, which is greater than or equal to the second hold voltage.