公开(公告)号：US20210335888A1

公开(公告)日：2021-10-28

申请号：US17371138

申请日：2021-07-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masayoshi IWAYAMA ,  Tatsuya KISHI ,  Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Tadashi KAI

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

公开(公告)号：US20190109280A1

公开(公告)日：2019-04-11

申请号：US16203114

申请日：2018-11-28

Applicant: SK hynix Inc. ,  TOSHIBA MEMORY CORPORATION

Inventor： Jong-Koo LIM ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Yang-Kon KIM ,  Ku-Youl JUNG ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Makoto NAGAMINE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.

公开(公告)号：US20180277745A1

公开(公告)日：2018-09-27

申请号：US15702677

申请日：2017-09-12

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Tadaaki OIKAWA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI ,  Yang Kon KIM ,  Ku Youl JUNG ,  Jong Koo LIM ,  Jae Hyoung LEE ,  Soo Man SEO ,  Sung Woong CHUNG ,  Tae Young LEE

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element, the magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes first and second sub-magnetic layers each containing at least iron (Fe) and boron (B), and a concentration of boron (B) contained in the first sub-magnetic layer is different from a concentration of boron (B) contained in the second sub-magnetic layer.

公开(公告)号：US20180076383A1

公开(公告)日：2018-03-15

申请号：US15463331

申请日：2017-03-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first and second magnetic layers. The second magnetic layer includes a first main surface on the nonmagnetic layer side and a second main surface opposite to the first main surface, and includes a first region on the first main surface side and a second region on the second main surface side, and an intermediate region between the first and second regions and containing a predetermined nonmagnetic element. A concentration of the predetermined nonmagnetic element in the intermediate region is higher than that in the first and second regions. The second magnetic layer contains a magnetic element from the first to second main surfaces.

公开(公告)号：US20180076262A1

公开(公告)日：2018-03-15

申请号：US15445829

申请日：2017-02-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Youngmin EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Hiroyuki OHTORI

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a semiconductor device includes a first rare earth oxide layer, a first magnetic layer being adjacent to the first rare earth oxide layer, and a nonmagnetic layer, the first magnetic layer being disposed between the first rare earth oxide layer and the nonmagnetic layer and being oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer.

公开(公告)号：US20200083285A1

公开(公告)日：2020-03-12

申请号：US16352680

申请日：2019-03-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Toshihiko NAGASE ,  Daisuke WATANABE ,  Koji UEDA ,  Tadashi KAI ,  Kazumasa SUNOUCHI

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12 ,  H01F41/34

Abstract: According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.

公开(公告)号：US20190259438A1

公开(公告)日：2019-08-22

申请号：US16400048

申请日：2019-05-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Tsuneo INABA ,  Daisuke WATANABE ,  Masahiko NAKAYAMA ,  Nobuyuki OGATA ,  Masaru TOKO ,  Hisanori AIKAWA ,  Jyunichi OZEKI ,  Toshihiko NAGASE ,  Young Min EEH ,  Kazuya SAWADA

IPC: G11C11/16 ,  G11C7/10

Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a scurrent level of the second pulse is different from a current level of the first pulse.

公开(公告)号：US20180269043A1

公开(公告)日：2018-09-20

申请号：US15704820

申请日：2017-09-14

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koji UEDA ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Youngmin EEH ,  Kazuya SAWADA

IPC: H01J37/34 ,  C23C14/35 ,  H01L21/02

CPC classification number: H01J37/3435 ,  C23C14/35 ,  C23C14/352 ,  C23C14/505 ,  C23C14/542 ,  H01J37/3405 ,  H01J37/3452 ,  H01L21/02175 ,  H01L21/02266 ,  H01L43/12

Abstract: According to one embodiment, a film formation method using a magnetron sputtering apparatus including first and second magnets provided on first and second target holders, includes forming an insulating film on a wafer placed on a main surface of a wafer stage by sputtering first and second insulating targets set on the first and second target holders, wherein the wafer includes an effective area to be used for a product and an ineffective area outside the effective area, and when viewed from a direction perpendicular to the main surface of the wafer stage, at least a part of the first magnet overlaps the effective area of the wafer placed on the main surface of the wafer stage, and the entire second magnet does not overlap the effective area of the wafer placed on the main surface of the wafer stage.

公开(公告)号：US20180075895A1

公开(公告)日：2018-03-15

申请号：US15456031

申请日：2017-03-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Tsuneo INABA ,  Daisuke WATANABE ,  Masahiko NAKAYAMA ,  Nobuyuki OGATA ,  Masaru TOKO ,  Hisanori AIKAWA ,  Jyunichi OZEKI ,  Toshihiko NAGASE ,  Young Min EEH ,  Kazuya SAWADA

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C7/1096 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673

Abstract: According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.

公开(公告)号：US20210175413A1

公开(公告)日：2021-06-10

申请号：US17181087

申请日：2021-02-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Daisuke WATANABE ,  Toshihiko NAGASE

IPC: H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element includes a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; and a first layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the non-magnetic layer is provided. The first layer includes a rare-earth element and the first layer has a region including boron (B) at a proportion higher than a proportion of boron (B) in the first ferromagnetic layer.