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    Decorative coating film
    2.
    发明授权
    Decorative coating film 有权

    公开(公告)号：US10954398B2

    公开(公告)日：2021-03-23

    申请号：US16225463

    申请日：2018-12-19

    申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

    发明人： Toshimasa Hara ,  Junya Murai

    IPC分类号： C09D5/38 ,  C22C5/06 ,  B05D1/00 ,  B32B27/08 ,  C09D7/61 ,  C09D7/40 ,  B22F1/00 ,  C08J7/04 ,  B22F9/24 ,  C08K3/08 ,  C08K3/22 ,  B05D5/06

    摘要： The present disclosure provides a decorative coating film, which ensures and/or maintains millimeter wave transmission properties even though the decorative coating film is continuously used. The present disclosure relates to a decorative coating film formed on the surface of a resin substrate positioned in the pathway of a radar device, wherein the decorative coating film at least comprises: fine silver particles or fine silver alloy particles, nickel oxide, and a binding resin having light transmission properties, which binds the fine silver particles or the fine silver alloy particles dispersed in the decorative coating film with one another, wherein the shape of the nickel oxide is a wire shape.

    Method for producing semiconductor element
    3.
    发明授权
    Method for producing semiconductor element 有权

    公开(公告)号：US11152225B1

    公开(公告)日：2021-10-19

    申请号：US17179533

    申请日：2021-02-19

    申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

    发明人： Toshimasa Hara ,  Katsunori Danno ,  Motohisa Kado ,  Hayate Yamano

    IPC分类号： H01L21/00 ,  H01L21/385 ,  H01L21/477 ,  H01L21/426

    摘要： The present disclosure provides a method for producing a semiconductor element that can lower the potential risk of malfunction. The production method of the disclosure is a method for producing a semiconductor element which includes providing a semiconductor element precursor, the precursor having a metal electrode layer formed on the surface of a gallium oxide-based single crystal semiconductor layer and a dopant doped in at least part of an exposed portion on the surface of the gallium oxide-based single crystal semiconductor layer where the metal electrode layer is not layered, and annealing treatment of the semiconductor element precursor whereby the dopant is diffused to a portion of the gallium oxide-based single crystal semiconductor layer that are overlapping with the metal electrode layer in the layering direction, to form a Schottky junction between the gallium oxide-based single crystal semiconductor layer and the metal electrode layer.