摘要:
A reactor comprising a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, having a gas-diffusing member provided in an internal space of the body, and having a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet are diffused by the gas-diffusing member and then come into contact with the platinum coating to enhance reactivity, thereby producing water. A temperature of the reactor is held to be below an ignition temperature of hydrogen or a hydrogen-containing gas. The platinum-coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wall surface, and forming the platinum coating on the barrier coating.
摘要:
An improved reactor for generating water from hydrogen and oxygen which allows production of moisture at a high conversion rate exceeding 99 percent with the temperature kept under some 400° C. inside the reactor shell (1) and with the water vapor production being more than 1,000 sccm. One form of the reactor (FIG. 1) according to the invention is constructed with a closed cylinder divided into two compartments by an interior partition, a first reactor structural component (2) and a second reactor structural component (3), united to define a sealed interior space (1a). The sealed interior space (1a) of the reactor shell (1) is partitioned by a diffusion filter (10) into a first chamber (1b) provided with an inlet reflector unit (9) and a second chamber (1c) provided with an outlet reflector-diffuser unit (11). On the inside surface of the second reactor structural component (1c) is formed a platinum coated catalyst layer (13). The inlet reflector unit (9) comprises a cylindrical casing (9a) mounted over a starting material gas feed port (2c) on the inside surface of the first reactor structural component (2), side openings (9c) formed in the casing (9a) and a reflector (9b) closing the open end of the casing (9a). The outlet reflector-diffuser unit (11) has a cylindrical casing (11a) fixed over a water vapor gas outlet port (3c) on the inside surface of the second reactor structural component (3), side openings (11e) formed in the casing, a reflector (11b) closing the open end of the casing (11a), an outlet diffusion filter (11c) provided inside the casing (11a) and a platinum coated catalyst layer (11d) formed on the outlet diffusion filter (11c).
摘要:
Process for generating moisture for use in semiconductor manufacturing, the process comprising feeding hydrogen and oxygen into a reactor provided with a platinum-coated catalyst layer on an interior wall, thus enhancing the reactivity between hydrogen and oxygen by catalytic action and instantaneously reacting the reactivity-enhanced hydrogen and oxygen at a temperature below the ignition point to produce moisture without undergoing combustion at a high temperature, wherein the amount of unreacted hydrogen occurring in the generated moisture in starting up or terminating the moisture generating reaction is minimized and wherein undesired reactions such as undesired silicon oxide film coating are avoided. When the generation of moisture is started up by feeding hydrogen and oxygen into the reactor provided with a platinum-coated catalyst layer on the inside wall thereof, oxygen first starts to be fed and, some time after that, the supply of hydrogen is begun. In terminating the moisture generating operation by cutting off the supply of hydrogen and oxygen into the reactor, the feeding of hydrogen is first stopped and, some time after that, the supply of oxygen is shut off.
摘要:
A pressure type flow rate control apparatus (1) controls flow rate of a fluid in an environment where a ratio of P2/P1 between an absolute pressure P1 at an upstream side of an orifice and an absolute pressure P2 at a downstream side of the orifice is maintained at a value less than about 0.7. The apparatus comprises: a plate for forming the orifice (5); a control valve (2) positioned upstream of the orifice; an orifice corresponding valve (9) positioned downstream of the orifice (5); a primary pressure detector (3) positioned between the control valve (2) and the orifice (5); a secondary pressure detector (11) positioned downstream of the orifice (5); a calculation control device (6) for calculating flow rate Qc on the basis of the measured pressure P1 of the primary pressure detector (3) by a formula Qc=KP1 (K being a constant) and for outputting as a control signal Qy a difference between a flow rate command signal Qs and the calculated flow rate signal Qc to a drive unit (14) of the control valve 2; and a pressure comparing, calculating apparatus (10) for calculating the ratio of P2/P1 between the detected pressure P1 of the primary pressure detector (3) and the detected pressure P2 of the secondary pressure detector (11). The pressure P1 upstream of the orifice is adjusted by opening and closing the control valve by the control signal Qy, thereby controlling the flow rate downstream of the orifice.
摘要:
The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.
摘要:
It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
摘要:
A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost. The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (Al2O3)-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.
摘要翻译:能够容易地且成本低廉地在发湿反应堆的内壁面上形成具有均匀厚度和对基材的粘合性优异的保护铂膜的保护膜的阻挡膜。 其中氢和氧反应产生水分而不进行高温燃烧的发湿反应器由含铝的合金制成。 通过在产生水分的反应器的内壁表面上进行铝选择性氧化处理,形成主要为氧化铝(Al 2 O 3)的阻挡膜,然后将铂膜层叠并粘贴在阻挡膜上,使铂 形成涂层催化剂层。
摘要:
The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.
摘要:
A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost. The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (Al2O3)-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.
摘要翻译:能够容易地且成本低廉地在发湿反应堆的内壁面上形成具有均匀厚度和对基材的粘合性优异的保护铂膜的保护膜的阻挡膜。 其中氢和氧反应产生水分而不进行高温燃烧的发湿反应器由含铝的合金制成。 主要由氧化铝(Al 2 O 3 O 3)组成的阻挡膜是通过在产生水分的反应器的内壁表面上进行铝选择性氧化处理而形成的, 然后将铂膜层叠并粘贴到阻挡膜上,从而形成铂涂层催化剂层。
摘要:
It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments. According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.