公开(公告)号：US08056026B2

公开(公告)日：2011-11-08

申请号：US12334485

申请日：2008-12-14

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masahura Sakamoto ,  Alan E. Rosenbluth

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masahura Sakamoto ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/68 ,  G03F1/78

摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.

摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘。 掩模布局数据包括分布在单元格上的多边形，其中每个多边形具有边。 小区包括中心小区，中心小区上方和下方的两个垂直小区以及中心小区左侧和右侧的两个水平小区。 选择目标边对以确定在制作光刻掩模时的制造损失，以减小计算体积来确定制造损失。 基于所选择的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。

公开(公告)号：US08056023B2

公开(公告)日：2011-11-08

申请号：US12334482

申请日：2008-12-14

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masahura Sakamoto ,  Alan E. Rosenbluth

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masahura Sakamoto ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.

摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。 掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。 在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减少计算量。 基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。

公开(公告)号：US20100153902A1

公开(公告)日：2010-06-17

申请号：US12334485

申请日：2008-12-14

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/68 ,  G03F1/78

摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.

摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘。 掩模布局数据包括分布在单元格上的多边形，其中每个多边形具有边。 小区包括中心小区，中心小区上方和下方的两个垂直小区以及中心小区左侧和右侧的两个水平小区。 选择目标边对以确定在制作光刻掩模时的制造损失，以减小计算体积来确定制造损失。 基于所选择的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。

公开(公告)号：US08453076B2

公开(公告)日：2013-05-28

申请号：US12725287

申请日：2010-03-16

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Alan E. Rosenbluth ,  Kehan Tian ,  Masaharu Sakamoto ,  Saeed Bagheri

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Alan E. Rosenbluth ,  Kehan Tian ,  Masaharu Sakamoto ,  Saeed Bagheri

IPC分类号： G06F17/50

CPC分类号： G03F7/70433 ,  G03F1/36 ,  G03F1/70 ,  G03F7/705

摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.

摘要翻译： 半导体器件设计的光波数据分为几个区域。 对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。 基于第一波前工程的结果对每个区域的光波数据进行归一化。 至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。 第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。 可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。

公开(公告)号：US08028254B2

公开(公告)日：2011-09-27

申请号：US12334488

申请日：2008-12-14

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/76 ,  G03F1/36

摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.

摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。 掩模布局数据包括多边形，其中每个多边形具有多个边。 每个目标边对由一个或多个多边形的两个边缘定义。 确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。 确定制造损失是基于所选择的目标边缘对。 确定平版印刷掩模的可制造性使用连续的衍生物来表征平版印刷掩模的可制造性在连续尺度上。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。

公开(公告)号：US20110231803A1

公开(公告)日：2011-09-22

申请号：US12725287

申请日：2010-03-16

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Alan E. Rosenbluth ,  Kehan Tian ,  Masaharu Sakamoto ,  Saeed Bagheri

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Alan E. Rosenbluth ,  Kehan Tian ,  Masaharu Sakamoto ,  Saeed Bagheri

IPC分类号： G06F17/50

CPC分类号： G03F7/70433 ,  G03F1/36 ,  G03F1/70 ,  G03F7/705

摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.

摘要翻译： 半导体器件设计的光波数据分为几个区域。 对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。 基于第一波前工程的结果对每个区域的光波数据进行归一化。 至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。 第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。 可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。

公开(公告)号：US20100153903A1

公开(公告)日：2010-06-17

申请号：US12334488

申请日：2008-12-14

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

IPC分类号： G06F17/50

CPC分类号： G03F1/76 ,  G03F1/36

摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.

摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。 掩模布局数据包括多边形，其中每个多边形具有多个边。 每个目标边对由一个或多个多边形的两个边缘定义。 确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。 确定制造损失是基于所选择的目标边缘对。 确定平版印刷掩模的可制造性使用连续的衍生物来表征平版印刷掩模的可制造性在连续尺度上。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。

公开(公告)号：US20100153901A1

公开(公告)日：2010-06-17

申请号：US12334482

申请日：2008-12-14

申请人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

发明人： Tadanobu Inoue ,  David O. Melville ,  Hidemasa Muta ,  Kehan Tian ,  Masaharu Sakamoto ,  Alan E. Rosenbluth

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/36

摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.

摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。 掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。 在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减小计算量。 基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。

公开(公告)号：US06448958B1

公开(公告)日：2002-09-10

申请号：US09111131

申请日：1998-07-03

申请人： Hidemasa Muta

发明人： Hidemasa Muta

IPC分类号： G09G500

CPC分类号： H04M1/72533 ,  G06F3/0481 ,  H04M1/72522

摘要： To make window systems which are widely used in personal computers and applications for personal computers operable in a portable information terminal which does not have a sufficient processing capability, input information such as a key input from operator generated in a portable information terminal 210 is sent to a remote supporting server 240 where it executes or simulates an arbitrary window system which is free from restriction of functions to generate a rendering image. The supporting server then converts the rendering image to an image suitable to the portable information terminal and sends it back to the portable information terminal 210 as a rendering instruction. The portable information terminal 210 receives the rendering instruction of this optimized image for display.

摘要翻译： 为了使在个人计算机中广泛使用的窗口系统和在不具有足够的处理能力的便携式信息终端中可操作的个人计算机的应用程序，将在便携式信息终端210中生成的来自操作者的输入信息的输入信息发送到 远程支持服务器240，其执行或模拟任何窗口系统，其不受功能限制以产生呈现图像。 然后，支持服务器将呈现图像转换为适合便携式信息终端的图像，并将其作为呈现指令发送回便携式信息终端210。 便携式信息终端210接收该优化图像的呈现指示以进行显示。

公开(公告)号：US06377271B1

公开(公告)日：2002-04-23

申请号：US09293643

申请日：1999-04-17

申请人： Hidemasa Muta ,  Tatsuya Sobue ,  Aya Mori

发明人： Hidemasa Muta ,  Tatsuya Sobue ,  Aya Mori

IPC分类号： G06T120

CPC分类号： H04N19/186 ,  H04N19/507

摘要： The image data transferring apparatus of this invention determines that the change in the image is very small when a change in the image is not detected during a given time period, for example, and generates transmission data which causes image data displaying a full color image of, for example, 24 bits per pixel to be displayed in the receiving side in a relatively small number of frames in a unit time for transmission. Conversely, the image data transferring apparatus transmits reduced color data which is reduced from 24 bits per pixel to 4 bits per pixel in a relatively large number of frames in a unit time to the receiving side when it is determined that many changes are included in the image.

摘要翻译： 本发明的图像数据传送装置例如在给定时间段内，当检测到图像的变化时，确定图像的变化非常小，并且生成使图像数据显示全色图像的发送数据 例如，在单位时间内以相对较少数量的帧显示在接收侧的每像素24位。 相反地​​，图像数据传送装置将缩小的彩色数据从单位时间内的相对大数量的帧中的每像素的24比特减少到接收侧，当确定许多改变被包括在 图片。