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1.发明申请DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK BY SELECTING TARGET EDGE PAIRS USED IN DETERMINING A MANUFACTURING PENALTY OF THE LITHOGRAPHIC MASK 有权通过选择用于确定LITHOGRAPHIC MASK的制造性罚款中使用的目标边缘对方法来确定LITHOGRAPHIC MASK的可制造性公开(公告)号：US20100153902A1
公开(公告)日：2010-06-17
申请号：US12334485
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘。 掩模布局数据包括分布在单元格上的多边形，其中每个多边形具有边。 小区包括中心小区，中心小区上方和下方的两个垂直小区以及中心小区左侧和右侧的两个水平小区。 选择目标边对以确定在制作光刻掩模时的制造损失，以减小计算体积来确定制造损失。 基于所选择的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。
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2.发明授权Determining manufacturability of lithographic mask using continuous derivatives characterizing the manufacturability on a continuous scale 有权使用连续的衍生物确定平版印刷掩模的可制造性，表征连续刻度上的可制造性公开(公告)号：US08028254B2
公开(公告)日：2011-09-27
申请号：US12334488
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。 掩模布局数据包括多边形，其中每个多边形具有多个边。 每个目标边对由一个或多个多边形的两个边缘定义。 确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。 确定制造损失是基于所选择的目标边缘对。 确定平版印刷掩模的可制造性使用连续的衍生物来表征平版印刷掩模的可制造性在连续尺度上。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。
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公开(公告)号：US08453076B2
公开(公告)日：2013-05-28
申请号：US12725287
申请日：2010-03-16
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/70 , G03F7/705
摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.
摘要翻译： 半导体器件设计的光波数据分为几个区域。 对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。 基于第一波前工程的结果对每个区域的光波数据进行归一化。 至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。 第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。 可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。
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公开(公告)号：US20110231803A1
公开(公告)日：2011-09-22
申请号：US12725287
申请日：2010-03-16
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/70 , G03F7/705
摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.
摘要翻译： 半导体器件设计的光波数据分为几个区域。 对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。 基于第一波前工程的结果对每个区域的光波数据进行归一化。 至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。 第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。 可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。
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5.发明申请DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE 有权使用连续衍生物确定表面掩模的可制造性，表征连续性尺度上的可制造性公开(公告)号：US20100153903A1
公开(公告)日：2010-06-17
申请号：US12334488
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。 掩模布局数据包括多边形，其中每个多边形具有多个边。 每个目标边对由一个或多个多边形的两个边缘定义。 确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。 确定制造损失是基于所选择的目标边缘对。 确定平版印刷掩模的可制造性使用连续的衍生物来表征平版印刷掩模的可制造性在连续尺度上。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。
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6.发明申请Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权通过减少用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性公开(公告)号：US20100153901A1
公开(公告)日：2010-06-17
申请号：US12334482
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
CPC分类号： G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。 掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。 在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减小计算量。 基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。
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7.发明授权Determining manufacturability of lithographic mask by selecting target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权通过选择用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性公开(公告)号：US08056026B2
公开(公告)日：2011-11-08
申请号：US12334485
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘。 掩模布局数据包括分布在单元格上的多边形，其中每个多边形具有边。 小区包括中心小区，中心小区上方和下方的两个垂直小区以及中心小区左侧和右侧的两个水平小区。 选择目标边对以确定在制作光刻掩模时的制造损失，以减小计算体积来确定制造损失。 基于所选择的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。
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8.发明授权Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权通过减少用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性公开(公告)号：US08056023B2
公开(公告)日：2011-11-08
申请号：US12334482
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。 掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。 在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减少计算量。 基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。
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9.发明申请Determining manufacturability of lithographic mask based on manufacturing shape penalty of aspect ratio of edge that takes into account pair of connected edges of the edge 失效基于边缘长宽比的制造形状损失考虑到边缘的连接边缘对，确定平版印刷掩模的可制造性公开(公告)号：US20120196210A1
公开(公告)日：2012-08-02
申请号：US13017593
申请日：2011-01-31
CPC分类号： G06F17/5081 , G03F1/0069 , G03F1/30 , G03F1/36 , G03F1/38 , G03F1/70 , G06F19/00 , G21K5/00
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the mask, for determining a manufacturing penalty in making the mask. The manufacturability of the mask, including the manufacturing penalty in making the mask, is determined based on the target edge pairs as selected, and is dependent on the manufacturing penalty in making the mask. Determining the manufacturability of the mask includes, for a selected edge pair having first and second edges that are at least substantially parallel to one another, determining a manufacturing shape penalty owing to an aspect ratio of the first edge relative to a size of a gap between the first edge and the second edge. This penalty takes into account a pair of connected edges of the first edge that are at least substantially parallel to the first edge.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从掩模的掩模布局数据中选择目标边对，用于确定制作掩模时的制造损失。 基于所选择的目标边缘对来确定掩模的可制造性，包括制造掩模时的制造损失，并且取决于制造掩模时的制造损失。 确定掩模的可制造性包括：对于具有至少基本上彼此平行的第一和第二边缘的所选边缘对，由于第一边缘的纵横比相对于第一边缘的宽度比， 第一边缘和第二边缘。 这种惩罚考虑到第一边缘的至少基本平行于第一边缘的一对连接的边缘。
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10.发明授权Determining manufacturability of lithographic mask based on manufacturing shape penalty of aspect ratio of edge that takes into account pair of connected edges of the edge 失效基于边缘长宽比的制造形状损失考虑到边缘的连接边缘对，确定平版印刷掩模的可制造性公开(公告)号：US08539390B2
公开(公告)日：2013-09-17
申请号：US13017593
申请日：2011-01-31
CPC分类号： G06F17/5081 , G03F1/0069 , G03F1/30 , G03F1/36 , G03F1/38 , G03F1/70 , G06F19/00 , G21K5/00
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the mask, for determining a manufacturing penalty in making the mask. The manufacturability of the mask, including the manufacturing penalty in making the mask, is determined based on the target edge pairs as selected, and is dependent on the manufacturing penalty in making the mask. Determining the manufacturability of the mask includes, for a selected edge pair having first and second edges that are at least substantially parallel to one another, determining a manufacturing shape penalty owing to an aspect ratio of the first edge relative to a size of a gap between the first edge and the second edge. This penalty takes into account a pair of connected edges of the first edge that are at least substantially parallel to the first edge.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从掩模的掩模布局数据中选择目标边对，用于确定制作掩模时的制造损失。 基于所选择的目标边缘对来确定掩模的可制造性，包括制造掩模时的制造损失，并且取决于制造掩模时的制造损失。 确定掩模的可制造性包括：对于具有至少基本上彼此平行的第一和第二边缘的所选边缘对，由于第一边缘的纵横比相对于第一边缘的宽度比， 第一边缘和第二边缘。 这种惩罚考虑到第一边缘的至少基本平行于第一边缘的一对连接的边缘。
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