公开(公告)号：US5248630A

公开(公告)日：1993-09-28

申请号：US857944

申请日：1992-03-26

申请人： Tadashi Serikawa ,  Seiichi Shirai ,  Akio Okamoto ,  Shirou Suyama

发明人： Tadashi Serikawa ,  Seiichi Shirai ,  Akio Okamoto ,  Shirou Suyama

IPC分类号： H01L21/205 ,  H01L21/321 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L29/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/321 ,  H01L29/78675 ,  Y10S438/909

摘要： A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.

摘要翻译： 根据本发明的设置在基板上的薄膜硅半导体器件包括晶格常数小于单晶晶格和小晶粒尺寸的薄多晶硅薄膜。 该薄多晶硅膜可以通过溅射沉积法将薄的非晶硅膜沉积在具有3.5Pa或更低的压力的惰性气体中并在10秒或更短的时间内退火薄的非晶硅膜来获得， 多结晶。 包括这种具有小晶格常数的薄多晶硅膜的薄膜硅半导体器件具有包括100cm 2 / Vxs或更高的载流子迁移率的优异特性。

公开(公告)号：US5132754A

公开(公告)日：1992-07-21

申请号：US222966

申请日：1988-07-21

申请人： Tadashi Serikawa ,  Seiichi Shirai ,  Akio Okamoto ,  Shirou Suyama

发明人： Tadashi Serikawa ,  Seiichi Shirai ,  Akio Okamoto ,  Shirou Suyama

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/321 ,  H01L21/324 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/04 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/321 ,  H01L29/78675

摘要： A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.

公开(公告)号：US5317405A

公开(公告)日：1994-05-31

申请号：US840559

申请日：1992-02-25

申请人： Makoto Kuriki ,  Hitoshi Arai ,  Shigenobu Sakai ,  Masato Nakamura ,  Hideki Nakajima ,  Shirou Suyama ,  Kazutake Uehira ,  Noboru Hagiwara

发明人： Makoto Kuriki ,  Hitoshi Arai ,  Shigenobu Sakai ,  Masato Nakamura ,  Hideki Nakajima ,  Shirou Suyama ,  Kazutake Uehira ,  Noboru Hagiwara

IPC分类号： H04N7/14 ,  H04N5/30

CPC分类号： H04N7/144

摘要： In a display and image capture apparatus for a videophone or video teleconferencing system a half-transparent mirror array is disposed adjacent the display surface of a display and an image reflected by the half-transparent mirror array is captured by a video camera. The half-transparent mirror array is formed by a plurality of micro HMs arranged in the same plane at a predetermined inclination angle and reflects incident light from a subject toward the video camera.

摘要翻译： 在可视电话或视频电话会议系统的显示和图像捕获设备中，半透明反射镜阵列邻近显示器的显示表面设置，由半透明反射镜阵列反射的图像由摄像机捕获。 该半透明反射镜阵列由以规定的倾斜角配置在同一平面上的多个微型HM形成，将来自被摄体的入射光反射到摄像机。