摘要:
Disclosed is an optical collimator-use lens component including: a thin tube; a partially spherical lens that has been fixed in an inner hole of the thin tube so that an insertion portion having a predetermined length is left, is made of glass whose refractive index is approximately uniform, and has translucent spherical surfaces, whose centers of curvature are approximately the same, at both ends of a cylindrical portion of the partially spherical lens; and an adhesive that bonds the partially spherical lens to the thin tube. An axial deviation amount between a center axis of the thin tube and an optical axis of the partially spherical lens is 5 μm or less. When a capillary tube, in whose inner hole an optical fiber has been fixed and whose axial deviation amount between an outer peripheral surface of the capillary tube and a core center of an end surface of the optical fiber is 1.5 μm or less, is inserted into the insertion portion of the thin tube and the end surface of the optical fiber is fixed at a position at which a distance of the end surface to a focal point position of the partially spherical lens becomes ±40 μm or less, emission light has an emission light bend of 0.2° or less with respect to the center axis of the thin tube.
摘要:
Disclosed is an optical collimator-use lens component including: a thin tube; a partially spherical lens that has been fixed in an inner hole of the thin tube so that an insertion portion having a predetermined length is left, is made of glass whose refractive index is approximately uniform, and has translucent spherical surfaces, whose centers of curvature are approximately the same, at both ends of a cylindrical portion of the partially spherical lens; and an adhesive that bonds the partially spherical lens to the thin tube. An axial deviation amount between a center axis of the thin tube and an optical axis of the partially spherical lens is 5 μm or less. When a capillary tube, in whose inner hole an optical fiber has been fixed and whose axial deviation amount between an outer peripheral surface of the capillary tube and a core center of an end surface of the optical fiber is 1.5 μm or less, is inserted into the insertion portion of the thin tube and the end surface of the optical fiber is fixed at a position at which a distance of the end surface to a focal point position of the partially spherical lens becomes ±40 μm or less, emission light has an emission light bend of 0.2° or less with respect to the center axis of the thin tube.
摘要:
There is provided a storage system including one or more LDEVs, one or more processors, a local memory or memories corresponding to the processor or processors, and a shared memory, which is shared by the processors, wherein control information on I/O processing or application processing is stored in the shared memory, and the processor caches a part of the control information in different storage areas on a type-by-type basis in the local memory or memories corresponding to the processor or processors in referring to the control information stored in the shared memory.
摘要:
A switch unit, which is connected to one or more computers and one or more storage systems, comprises an update function for updating transfer management information (a routing table, for example). The storage system has a function for adding a virtual port to a physical port. The storage system migrates the virtual port addition destination from a first physical port to a second physical port and transmits a request of a predetermined type which includes identification information on the virtual port of the migration target to the switch unit. The transfer management information is updated by the update function of the switch unit so that the transfer destination which corresponds with the migration target virtual port is the switch port connected to the second physical port.
摘要:
A semiconductor integrated device (CBi-CMOS) is disclosed wherein both CMOS transistors and a vertical npn and pnp transistor are formed in a single semiconductor substrate and a latch up phenomenon in the CMOS is prevented. A method of manufacturing the CBi-CMOS is also disclosed. In the CBi-CMOS, four elements, that is, an n-MOSFET, a p-MOSFET and npn and pnp vertical transistors are formed in an n-type epitaxial silicon layer formed on a p-type silicon substrate. The n-MOSFET is formed in a p-well which has a p.sup.+ -type buried region. In the element region of the p-MOSFET, an n.sup.+ -type buried region is also formed. In the element regions of the npn and pnp vertical transistors, a first p.sup.+ -type isolation diffusion region is selectively formed. And an n.sup.+ -type buried region is selectively formed both in these element region of the npn and pnp vertical transistors. In the element region of the npn transistor, the vertical npn transistor is formed using the n-type region surrounded by the first p.sup.+ -type isolation diffusion region as a collector. In the element region of the pnp transistor, a p.sup.+ -type buried region is formed on the n.sup.+ -type buried region, and the vertical pnp transistor is formed using the p.sup.+ -type buried region as a collector. In this case, a second p.sup.+ -type isolation diffusion region is formed to isolate an n-type base region of the vertical pnp transistor.
摘要:
There is provided a method of forming an electrode on the surface of a semiconductor substrate which comprises the steps of(A) depositing on the surface of a semiconductor substrate an insulation layer provided with at least one opening for contact between the electrode and the semiconductor substrate;(B) coating a plurality of spacer layers made of insulation material on the surface of the insulation layer inclusive of the contact opening;(C) selectively depositing a photoresist layer on the uppermost are of said plural spacer layers, said uppermost spacer layer in direct contact with the photoresist layer being designed to be etched at a lower rate than the immediately underlying spacer layer;(D) using the photoresist layers as a mask to selectively etch the spacer layers until said opening is exposed;(E) depositing a metal layer on the surface of the semiconductor substrate inclusive of said opening and photoresist layer; and(F) removing the photoresist layer and the portions of the metal layer formed, such that the portion of the metal layer which is deposited on the surface of the semiconductor substrate exposed through the opening constitute the electrode, and the spacer layers remaining on the insulation layer form protective layers for the surface of the semiconductor substrate.
摘要:
One code (a compressed redundant code) is created based on a plurality of first redundant codes, each created on the basis of a plurality of data units, and this compressed redundant code is written to a nonvolatile storage area. This compressed redundant code is used to restore either a data element constituting a multiple-failure data, or a first redundant code corresponding to the multiple-failure data, which is stored in an unreadable sub-storage area of a partially failed storage device, and to restore the data element constituting the multiple-failure data which is stored in a sub-storage area of a completely failed storage device, based on the restored either data element or first redundant code, and either another data element constituting the multiple-failure data or the first redundant code corresponding to the multiple-failure data.
摘要:
In a card socket (21-1) having a socket body (21) in which a memory card (10-1) is set and socket electrodes (22) formed on a bottom surface of the socket body (21) to be electrically contacted to exposed electrodes (12) of the memory card (10-1) when set into the card socket (21-1), the memory card (10-1) is magnetically contacted and fixed to the bottom surface of the socket body (21). The card socket (21-1) further has a card removal button (24) for releasing the memory card (10-1) from the card socket (21-1).
摘要:
A switch unit, which is connected to one or more computers and one or more storage systems, comprises an update function for updating transfer management information (a routing table, for example). The storage system has a function for adding a virtual port to a physical port. The storage system migrates the virtual port addition destination from a first physical port to a second physical port and transmits a request of a predetermined type which includes identification information on the virtual port of the migration target to the switch unit. The transfer management information is updated by the update function of the switch unit so that the transfer destination which corresponds with the migration target virtual port is the switch port connected to the second physical port.
摘要:
One code (a compressed redundant code) is created based on a plurality of first redundant codes, each created on the basis of a plurality of data units, and this compressed redundant code is written to a nonvolatile storage area. This compressed redundant code is used to restore either a data element constituting a multiple-failure data, or a first redundant code corresponding to the multiple-failure data, which is stored in an unreadable sub-storage area of a partially failed storage device, and to restore the data element constituting the multiple-failure data which is stored in a sub-storage area of a completely failed storage device, based on the restored either data element or first redundant code, and either another data element constituting the multiple-failure data or the first redundant code corresponding to the multiple-failure data.