公开(公告)号：US20110089553A1

公开(公告)日：2011-04-21

申请号：US12637755

申请日：2009-12-15

申请人： Tae Hyun KIM ,  Gyu Han KIM

发明人： Tae Hyun KIM ,  Gyu Han KIM

IPC分类号： H01L25/16 ,  H01L23/52

CPC分类号： H01L23/49827 ,  H01L23/13 ,  H01L23/24 ,  H01L23/3121 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/49109 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01037 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15157 ,  H01L2924/15159 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2924/00014

摘要： Provided are a stack-type solid-state drive (SSD) capable of reducing a size thereof by mounting semiconductor chips in a recess region formed in a substrate, and a method of fabricating the stack-type SSD. The stack-type SSD includes a substrate including one or more recess regions; one or more passive electronic elements mounted in the one or more recess regions; one or more control semiconductor chips mounted in the one or more recess regions; one or more non-volatile memory semiconductor chips mounted on a first surface of the substrate so as to overlap the one or more passive electronic elements, the one or more control semiconductor chips, or all the passive electronic elements and the control semiconductor chips; and an external connection terminal located on a side of the substrate.

摘要翻译： 提供了一种能够通过将半导体芯片安装在形成在基板中的凹部区域中而能够减小其尺寸的堆叠型固态驱动器（SSD），以及制造叠层型SSD的方法。 堆叠型SSD包括包括一个或多个凹部区域的基板; 安装在所述一个或多个凹部区域中的一个或多个无源电子元件; 安装在所述一个或多个凹部区域中的一个或多个控制半导体芯片; 一个或多个非易失性存储器半导体芯片，其安装在所述基板的第一表面上，以便与所述一个或多个无源电子元件，所述一个或多个控制半导体芯片或所有无源电子元件和所述控制半导体芯片重叠; 以及位于基板一侧的外部连接端子。

公开(公告)号：US20100279511A1

公开(公告)日：2010-11-04

申请号：US12512813

申请日：2009-07-30

申请人： Jung Hwan CHUN ,  Gyu Han KIM

发明人： Jung Hwan CHUN ,  Gyu Han KIM

IPC分类号： H01L21/3065 ,  H01L21/306 ,  H01L21/465 ,  C23F1/08

CPC分类号： H01L21/76898

摘要： Provided are a wafer through silicon via (TSV) forming method and equipment therefor. The wafer TSV forming method includes the operations of arranging a wafer having a front surface having a circuit area patterned thereon; recognizing locations of bond pads in the circuit area of the front surface of the wafer by using an image recognition camera, and converting the recognition of the locations into bond pad location information with respect to a back surface of the wafer; flipping the wafer; forming etching holes with middle depth in the back surface of the wafer by using a laser in a manner to match the locations of the bond pads by using the bond pad location information from the image recognition camera; and performing a plasma isotropic etching on the back surface having formed therein the etching holes with middle depth, thereby forming TSVs penetrating the bond pads.

摘要翻译： 提供了一种晶片通过硅通孔（TSV）的形成方法及其设备。 晶片TSV形成方法包括布置具有其上形成有电路区域的正面的晶片的操作; 通过使用图像识别照相机识别晶片正面的电路区域中的接合焊盘的位置，并且将位置的识别转换为相对于晶片的背面的接合焊盘位置信息; 翻转晶片; 通过使用激光以通过使用来自图像识别照相机的接合焊盘位置信息来匹配接合焊盘的位置的方式在晶片的后表面中形成具有中间深度的蚀刻孔; 并且在其中形成有具有中间深度的蚀刻孔的背表面上进行等离子体各向同性蚀刻，从而形成贯穿接合焊盘的TSV。