摘要:
A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
摘要:
A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
摘要:
A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
摘要:
A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
摘要:
A difluoropyridine-based compound includes at least one difluoropyridine group in its molecule. The difluoropyridine-based compound may be used as an electron injection material, an electron transport material, or a hole blocking material in full-color fluorescent or phosphorescent devices. The difluoropyridine-based compound has good electrical characteristics and a high charge transport capability. The difluoropyridine-based compound may be used to produce an organic electroluminescent device with high efficiency, low voltage, improved brightness, and a long life expectancy.
摘要:
A triazine-based compound having three biphenyl groups, represented by Structure 1, below, wherein R1 through R18 are each independently one of: hydrogen, a substituted C1-30 alkyl group, an unsubstituted C1-30 alkyl group, a substituted C6-50 aryl group, an unsubstituted C6-50 aryl group, a substituted C4-50 heteroaryl group, and an unsubstituted C4-50 heteroaryl group, and at least one of R1, R2, R7, R8, R13 and R14 is one of: a substituted C1-30 alkyl group, an unsubstituted C1-30 alkyl group, a substituted C6-50 aryl group, an unsubstituted C6-50 aryl group, a substituted C4-50 heteroaryl group, and an unsubstituted C4-50 heteroaryl group.
摘要:
A triarylamine-based compound of formula 1, a method of preparing the same, and an organic light emitting device including the triarylamine-based compound of formula 1: where Ar1 through Ar4 are independently a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C2-C30 heterocyclic group; R is a halogen atom, a cyano group, a substituted or unsubstituted C1-C30 alkyl group; n is an integer of 1 through 3; and m is an integer of 1 through 3. The triarylamine-based compound of formula 1 has excellent electrical properties and a great charge transporting capability. An organic light emitting device including an organic layer formed of the triarylamine-based compound has high efficiency, low operating voltage, great luminance, and long lifetime.
摘要:
A triarylamine-based compound of formula 1, a method of preparing the same, and an organic light emitting device including the triarylamine-based compound of formula 1: where Ar1 through Ar4 are independently a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C2-C30 heterocyclic group; R is a halogen atom, a cyano group, a substituted or unsubstituted C1-C30 alkyl group; n is an integer of 1 through 3; and m is an integer of 1 through 3. The triarylamine-based compound of formula 1 has excellent electrical properties and a great charge transporting capability. An organic light emitting device including an organic layer formed of the triarylamine-based compound has high efficiency, low operating voltage, great luminance, and long lifetime.
摘要:
A triarylamine-based compound of formula 1, a method of preparing the same, and an organic light emitting device including the triarylamine-based compound of formula 1: where Ar1 through Ar4 are independently a substituted or unsubstituted C6-C30 aryl group or a substituted or unsubstituted C2-C30 heterocyclic group; R is a halogen atom, a cyano group, a substituted or unsubstituted C1-C30 alkyl group; n is an integer of 1 through 3; and m is an integer of 1 through 3. The triarylamine-based compound of formula 1 has excellent electrical properties and a great charge transporting capability. An organic light emitting device including an organic layer formed of the triarylamine-based compound has high efficiency, low operating voltage, great luminance, and long lifetime.
摘要:
A triazine-based compound having three biphenyl groups, represented by Structure 1, below, wherein R1 through R18 are each independently one of: hydrogen, a substituted C1-30 alkyl group, an unsubstituted C1-30 alkyl group, a substituted C6-50 aryl group, an unsubstituted C6-50 aryl group, a substituted C4-50 heteroaryl group, and an unsubstituted C4-50 heteroaryl group, and at least one of R1, R2, R7, R8, R13 and R14 is one of: a substituted C1-30 alkyl group, an unsubstituted C1-30 alkyl group, a substituted C6-50 aryl group, an unsubstituted C6-50 aryl group, a substituted C4-50 heteroaryl group, and an unsubstituted C4-50 heteroaryl group.
摘要翻译:由以下结构1表示的具有三个联苯基的三嗪基化合物,其中R 1至R 18各自独立地为氢,取代的C 1-30个烷基,未取代的C 1〜30个烷基,取代的C 6〜6-50芳基,未取代的C 6 -50个芳基,取代的C 4-50杂芳基和未取代的C 1-4-50杂芳基,以及至少一个R SUB R 1,R 2,R 7,R 8,R 13和R SUB > 14 sub>是以下之一:取代的C 1-130烷基,未取代的C 1-130烷基,取代的C 6〜 50个芳基,未取代的C 6〜6-50芳基,取代的C 4-50杂芳基和未取代的C 4-50 杂芳基。