Method for designing Levenson photomask
    1.
    发明授权
    Method for designing Levenson photomask 失效
    设计Levenson光掩模的方法

    公开(公告)号:US6004701A

    公开(公告)日:1999-12-21

    申请号:US46794

    申请日:1998-03-24

    CPC分类号: G03F1/30

    摘要: In a Levenson photomask design method of partially forming a plurality of opening patterns for passing incident light in a light-shielding film for shielding the incident light, and arranging, on some patterns, phase shifters, line segment pairs of different patterns which are adjacent to each other within a predetermined distance R are extracted in units of line segments obtained by dividing the patterns. A pattern within a predetermined distance S from the central point of the opposite region of a line segment pair of interest in a direction perpendicular to the line segments is obtained. The obtained pattern is subjected to a process simulation to obtain resolution easiness representing the easiness in resolving the adjacent patterns. On the basis of the resolution easiness obtained for the adjacent pattern pair within the distance R, a phase shifter is arranged in ascending order of resolution easiness to give a phase difference. Resolution suitable for the exposure condition used can be obtained by a simple method. When the shifter arrangement is determined in consideration of the resolution easiness, a high-resolution shifter arrangement can be realized for a Levenson phase shift mask.

    摘要翻译: 在莱文森光掩模设计方法中,部分地形成用于使入射光入射到遮光膜中的入射光的多个开口图案,用于屏蔽入射光,并且在某些图案上布置移相器,与不同图案相邻的线段对 以规定的距离R为单位,以通过划分图案而得到的线段为单位提取。 获得与垂直于线段的方向相关的线段对的相对区域的中心点的预定距离S内的图案。 对所获得的图案进行处理模拟以获得表示分辨相邻图案的容易性的分辨率容易度。 基于在距离R内对相邻图案对获得的分辨率容易度,移位器按分辨率的顺序排列顺序排列以给出相位差。 可以通过简单的方法获得适合于所使用的曝光条件的分辨率。 考虑到分辨率容易度来确定移位器装置时,可以实现对莱文森相移掩模的高分辨率移位器装置。

    Method and a system for designing a photomask for use in manufacture of
a semiconductor device
    2.
    发明授权
    Method and a system for designing a photomask for use in manufacture of a semiconductor device 失效
    用于设计用于制造半导体器件的光掩模的方法和系统

    公开(公告)号:US5795683A

    公开(公告)日:1998-08-18

    申请号:US622411

    申请日:1996-03-27

    CPC分类号: G03F1/30

    摘要: A method for designing a photomask, used in photolithography using partially coherent incident light, the photomask having a substrate on which a plurality of transparent regions and opaque regions are formed, the transparent regions including a phase shifter for providing the incident light transmitting through the transparent regions with a phase difference, the method comprising the steps of extracting combinations of patterns adjacent to each other within a distance of a threshold value S2 as adjacent pairs from patterns corresponding to the transparent regions, calculating difficulty of correction of the adjacent pairs, sorting the adjacent pairs in an descending order of the difficulty of correction, connecting the patterns in the adjacent pairs to one another, such that a pair of adjacent patterns are not connected to each other and loop cut is performed if a closed loop is formed by connecting the adjacent patterns, and a pair of adjacent patterns are logically connected if a closed loop is not formed by connecting the adjacent patterns, and determining phases of light transmitted through the patterns, so that a phase of one of a pair of patterns is opposite to that of the other, on the basis of an inversion relationship finally obtained by the connecting step.

    摘要翻译: 一种用于设计光掩模的方法,其用于使用部分相干的入射光的光刻中,所述光掩模具有其上形成有多个透明区域和不透明区域的基板,所述透明区域包括移相器,用于提供透射透过的入射光 具有相位差的区域,所述方法包括以下步骤:在与所述透明区域对应的图案作为邻接对的阈值S2的距离内提取彼此相邻的图案的组合,计算相邻对的校正难度, 相邻的对以降序难度校正,将相邻对中的图案彼此连接,使得一对相邻图案彼此不连接,并且如果通过连接形成闭环,则执行循环切割 相邻图案和一对相邻图案在交流时逻辑连接 通过连接相邻图案而不形成偏移环路,并且确定通过图案传输的光的相位,使得一对图案中的一个图案的相位与另一图案的相位相反,基于最终通过 连接步骤。

    Optical proximity correction system
    3.
    发明授权
    Optical proximity correction system 失效
    光学邻近校正系统

    公开(公告)号:US6077310A

    公开(公告)日:2000-06-20

    申请号:US239770

    申请日:1999-01-29

    摘要: Pattern data that is an object of correction is divided into an area on which correction is made using correction values that have been obtained in advance for patterns and their respective layouts and an area on which correction is made on the basis of correction values calculated by a simulator. For example, simulation-based correction is made on a gate layer in a memory, while rule-based correction is made on a gate layer in the other area than the memory on the basis of rules for active gate width only. After being subjected to the correction, the areas are combined.

    摘要翻译: 作为校正对象的图案数据被划分为使用对于图案及其各自的布局预先获得的校正值进行校正的区域,并且基于由其计算的校正值进行校正的区域 模拟器 例如,在存储器中的栅极层上进行基于模拟的校正,而仅在基于活动栅极宽度的规则的基础上,在除存储器之外的另一区域的栅极层上进行基于规则的校正。 经过修正后,区域合并。

    Optical proximity correction method
    4.
    发明授权
    Optical proximity correction method 失效
    光学邻近校正方法

    公开(公告)号:US5879844A

    公开(公告)日:1999-03-09

    申请号:US771252

    申请日:1996-12-20

    摘要: Pattern data that is an object of correction is divided into an area on which correction is made using correction values that have been obtained in advance for patterns and their respective layouts and an area on which correction is made on the basis of correction values calculated by a simulator. For example, simulation-based correction is made on a gate layer in a memory, while rule-based correction is made on a gate layer in the other area than the memory on the basis of rules for active gate width only. After being subjected to the correction, the areas are combined.

    摘要翻译: 作为校正对象的图案数据被划分为使用对于图案及其各自的布局预先获得的校正值进行校正的区域,并且基于由其计算的校正值进行校正的区域 模拟器 例如,在存储器中的栅极层上进行基于模拟的校正,而仅在基于活动栅极宽度的规则的基础上,在除存储器之外的另一区域的栅极层上进行基于规则的校正。 经过修正后,区域合并。

    Method for designing phase-shifting masks with automatization capability
    5.
    发明授权
    Method for designing phase-shifting masks with automatization capability 失效
    设计具有自动化功能的相移掩模的方法

    公开(公告)号:US5538815A

    公开(公告)日:1996-07-23

    申请号:US120386

    申请日:1993-09-14

    IPC分类号: G03F1/28 G03F9/00

    CPC分类号: G03F1/28

    摘要: A method for designing a phase-shifting mask in a manner that a phase shifter of the mask is arranged so that a phase difference between light transmitted through clear areas with the phase shifter and light transmitted through clear areas without the phase shifter is set to 180.degree. or further different combination of phase differences being such as 0.degree., 90.degree. and 270.degree.. The method includes the steps of: defining a threshold value in a manner that the threshold value falls within a range which is possible to resolve using the phase-shifting masks; measuring a distance between neighboring shapes of the clear area; storing adjacent relationship of the neighboring shapes whose distance is less than the threshold; and automatically placing the phase shifter on one of the neighboring shapes of the clear areas in a manner that mutually neighboring clear area have an opposite phase to each other.

    摘要翻译: 一种用于以掩模的移相器的方式设计移相掩模的方法,使得透过透过区域的光与移相器之间的相位差和透过透明区域而没有移相器的光被设置为180° DEG或相差的其他不同组合如0°,90°和270°。 该方法包括以下步骤:以阈值落在可以使用相移掩模解析的范围内的方式定义阈值; 测量透明区域的相邻形状之间的距离; 存储距离小于阈值的相邻形状的相邻关系; 并且以相互相邻的清除区域彼此具有相反的相位的方式自动地将移相器放置在透明区域的相邻形状中的一个上。

    LSI mask manufacturing system, LSI mask manufacturing method and LSI mask manufacturing program

    公开(公告)号:US07047094B2

    公开(公告)日:2006-05-16

    申请号:US10397543

    申请日:2003-03-26

    申请人: Kiyomi Koyama

    发明人: Kiyomi Koyama

    IPC分类号: G06F19/00

    摘要: A computer implemented method for LSI mask manufacturing stores performance information of a lithography unit, connected to a network, in a lithography unit database. The method receives a lithography data and a lithography reservation condition from a user terminal connected to the network. The method stores the lithography data in a lithography data database. The method searches for a lithography unit matching to the lithography reservation condition, generating a list of lithography units, and sending the list to the user terminal. In addition, the method receives information of a lithography unit specified by the user terminal and sending a lithography request to the lithography unit specified by the user terminal.

    Electron-beam lithographic apparatus
    9.
    发明授权
    Electron-beam lithographic apparatus 失效
    电子束光刻设备

    公开(公告)号:US4538232A

    公开(公告)日:1985-08-27

    申请号:US370403

    申请日:1982-04-21

    申请人: Kiyomi Koyama

    发明人: Kiyomi Koyama

    CPC分类号: H01L21/30 H01J37/3026

    摘要: A coordinate data memory is provided, in which a plurality of coordinate data representing partial patterns constituting a pattern to be drawn on a semiconductor wafer are stored. The coordinate data are supplied from the coordinate data memory to a plurality of coordinate data converters. The data converters convert coordinate data into address data by which pattern memories are specified respectively. Bit patterns are formed according to the address data in the pattern memories, respectively. The bit patterns of the pattern memories are synchronously read out bit by bit and synthesized in a logic gate circuit, and the resultant pattern is supplied to a blanking circuit bit by bit.

    摘要翻译: 提供一种坐标数据存储器,其中存储表示构成要在半导体晶片上绘制的图案的部分图案的多个坐标数据。 坐标数据从坐标数据存储器提供给多个坐标数据转换器。 数据转换器将坐标数据转换成分别指定模式存储器的地址数据。 根据图案存储器中的地址数据分别形成位模式。 模式存储器的位模式逐位同步读出,并在逻辑门电路中合成,并将结果模式逐位提供给消隐电路。

    Electron beam pattern generation system
    10.
    发明授权
    Electron beam pattern generation system 失效
    电子束图案生成系统

    公开(公告)号:US4531191A

    公开(公告)日:1985-07-23

    申请号:US334913

    申请日:1981-12-28

    申请人: Kiyomi Koyama

    发明人: Kiyomi Koyama

    摘要: Bit pattern data stored in an external memory unit is read out under the control of a microprocessor for being compressed in a data compressing unit and then stacked in a memory unit. At the time of storing data in the memory unit, all the stripe data constituting one chip frame are written in a state capable of being made high speed sequentially accessible at the time of the read-out without need of dividing a memory bank into portions for the individual stripes but by continuously using the address space covering the entire memory areas. This is effected by a memory management unit and a memory module management unit provided in the memory unit.

    摘要翻译: 存储在外部存储器单元中的位模式数据在微处理器的控制下读出,用于在数据压缩单元中被压缩,然后堆叠在存储器单元中。 在将数据存储在存储器单元中时,构成一个芯片帧的所有条带数据被写入能够在读出时顺序访问的高速状态,而不需要将存储体划分成多个部分 单独的条纹,但通过连续使用覆盖整个存储区域的地址空间。 这由存储器管理单元和设置在存储器单元中的存储器模块管理单元来实现。