公开(公告)号：US20230268404A1

公开(公告)日：2023-08-24

申请号：US18309564

申请日：2023-04-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd

发明人： Ming-Chia Tai ,  Ju-Yuan Tzeng ,  Hsin-Che Chiang ,  Yuan-Sheng Huang ,  Chun-Sheng Liang

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L21/3065 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L29/41791 ,  H01L29/66795 ,  H01L21/3065 ,  H01L27/0886 ,  H01L21/823431 ,  H01L29/785

摘要： A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.

公开(公告)号：US10134861B2

公开(公告)日：2018-11-20

申请号：US14509576

申请日：2014-10-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd

发明人： Wen-Han Fang ,  Chang-Yin Chen ,  Ming-Chia Tai ,  Po-Chi Wu

IPC分类号： H01L27/088 ,  H01L29/49 ,  H01L29/423 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a first fin structure and a second fin structure disposed over the substrate. The semiconductor device structure includes a first gate stack overlapping the first fin structure. The first gate stack has a first width. The first gate stack includes a first work function layer. A first top surface of the first work function layer is positioned above the first fin structure by a first distance. The semiconductor device structure includes a second gate stack disposed overlapping the second fin structure. The first width is less than a second width of the second gate stack. A second top surface of a second work function layer of the second gate stack is positioned above the second fin structure by a second distance. The first distance is less than the second distance.

公开(公告)号：US11670695B2

公开(公告)日：2023-06-06

申请号：US17232644

申请日：2021-04-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ming-Chia Tai ,  Ju-Yuan Tzeng ,  Hsin-Che Chiang ,  Yuan-Sheng Huang ,  Chun-Sheng Liang

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L21/3065 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L29/41791 ,  H01L21/3065 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/785

摘要： A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.

公开(公告)号：US20210234013A1

公开(公告)日：2021-07-29

申请号：US17232644

申请日：2021-04-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ming-Chia Tai ,  Ju-Yuan Tzeng ,  Hsin-Che Chiang ,  Yuan-Sheng Huang ,  Chun-Sheng Liang

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L21/3065 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

摘要： A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.

公开(公告)号：US10763341B2

公开(公告)日：2020-09-01

申请号：US16183995

申请日：2018-11-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wen-Han Fang ,  Chang-Yin Chen ,  Ming-Chia Tai ,  Po-Chi Wu

IPC分类号： H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first fin structure and a second fin structure disposed over the substrate. The semiconductor device structure includes a first gate stack disposed over the substrate and overlapping the first fin structure. The first gate stack includes a first work function layer, a first gate electrode, and a first hard mask layer, the first gate electrode is over the first work function layer, the first hard mask layer is over the first gate electrode, the first gate electrode has a first convex top surface protruding beyond a first top surface of the first work function layer. The semiconductor device structure includes a second gate stack disposed over the substrate and overlapping the second fin structure.