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    IMAGE SENSOR DEVICE
    1.
    发明申请
    IMAGE SENSOR DEVICE 审中-公开

    公开(公告)号：US20190067356A1

    公开(公告)日：2019-02-28

    申请号：US15692395

    申请日：2017-08-31

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Kun-Huei LIN ,  Yin-Chieh HUANG ,  Yun-Wei CHENG ,  Yi-Hsing CHU ,  Cheng-Yuan LI ,  Chun-Hao CHOU

    IPC: H01L27/146

    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.

    CMOS IMAGE SENSOR STRUCTURE WITH IR/NIR INTEGRATION
    2.
    发明申请
    CMOS IMAGE SENSOR STRUCTURE WITH IR/NIR INTEGRATION 有权
    具有IR / NIR积分的CMOS图像传感器结构

    公开(公告)号：US20160163760A1

    公开(公告)日：2016-06-09

    申请号：US14562424

    申请日：2014-12-05

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Tsung-Han TSAI ,  Kun-Huei LIN ,  Chun-Hao CHOU ,  Tzu-Hsuan HSU ,  Ching-Chun WANG ,  Kuo-Cheng LEE ,  Yung-Lung HSU

    IPC: H01L27/146

    CPC classification number: H01L27/14649 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

    Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

    Abstract translation: 半导体器件包括衬底，感光器件，至少一个红外辐射感测器件，透明绝缘层，红外辐射切割层，滤色器层和红外辐射滤色器层。 光感测装置和至少一个红外辐射感测装置设置在基板中并且彼此相邻。 透明绝缘层设置在覆盖光感测装置和至少一个红外辐射感测装置的基板上。 红外辐射切割层设置在覆盖光感测装置的透明绝缘层上，用于滤除红外辐射和/或近红外辐射。 滤色器层设置在红外辐射切割层上。 红外辐射滤色器层设置在覆盖至少一个红外辐射感测装置的透明绝缘层上。

    INTEGRATED CIRCUIT STRUCTURE, DEVICE, AND METHOD
    3.
    发明申请
    INTEGRATED CIRCUIT STRUCTURE, DEVICE, AND METHOD 有权

    公开(公告)号：US20210327947A1

    公开(公告)日：2021-10-21

    申请号：US16850524

    申请日：2020-04-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Kun-Huei LIN ,  Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chun-Wei CHIA

    IPC: H01L27/146

    Abstract: An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.

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