公开(公告)号：US20230307392A1

公开(公告)日：2023-09-28

申请号：US17841223

申请日：2022-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chia-Li Lin ,  Yu-Chih Huang ,  Chen-Shien Chen

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/06 ,  H01L24/03 ,  H01L24/08 ,  H01L24/80 ,  H01L24/94 ,  H01L2224/94 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/0558 ,  H01L2224/05647 ,  H01L2224/05564 ,  H01L2224/08147 ,  H01L2224/03462 ,  H01L2224/03845 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2224/06517 ,  H01L2924/20102 ,  H01L2224/80203 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107

Abstract: In an embodiment, a device includes: a dielectric layer over an active surface of a semiconductor substrate; a conductive via in the dielectric layer, the conductive via including a first copper layer having a non-uniform grain orientation; and a bonding pad over the conductive via and in the dielectric layer, the bonding pad including a second copper layer having a uniform grain orientation, a top surface of the bonding pad being coplanar with a top surface of the dielectric layer.

公开(公告)号：US12300644B2

公开(公告)日：2025-05-13

申请号：US17841223

申请日：2022-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chia-Li Lin ,  Yu-Chih Huang ,  Chen-Shien Chen

IPC: H01L23/48 ,  H01L21/66 ,  H01L23/00

Abstract: In an embodiment, a device includes: a dielectric layer over an active surface of a semiconductor substrate; a conductive via in the dielectric layer, the conductive via including a first copper layer having a non-uniform grain orientation; and a bonding pad over the conductive via and in the dielectric layer, the bonding pad including a second copper layer having a uniform grain orientation, a top surface of the bonding pad being coplanar with a top surface of the dielectric layer.