公开(公告)号：US20170250089A1

公开(公告)日：2017-08-31

申请号：US15054142

申请日：2016-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Huang Kuo ,  Chia-Pin Lo ,  Wei-Barn Chen ,  Chen-Chieh Chiang ,  Chii-Ming Wu ,  Chi-Cherng Jeng

IPC: H01L21/3115 ,  H01L27/092 ,  H01L21/32 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/3105

CPC classification number: H01L27/0922 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/3105 ,  H01L21/823821 ,  H01L27/0924

Abstract: Semiconductor devices and manufacturing method of the same are disclosed. A semiconductor device includes a substrate, a p-type MOS transistor, an n-type MOS transistor and a cured flowable oxide layer. The substrate includes a first region and a second region. The p-type MOS transistor is in the first region. The n-type MOS transistor is in the second region. The cured flowable oxide layer covers the p-type MOS transistor and the n-type MOS transistor, wherein a first strain of the cured flowable oxide layer applying to the p-type MOS transistor is different from a second strain of the cured flowable oxide layer applying to the n-type MOS transistor, and the difference therebetween is greater than 0.002 Gpa.

公开(公告)号：US09859129B2

公开(公告)日：2018-01-02

申请号：US15054142

申请日：2016-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Huang Kuo ,  Chia-Pin Lo ,  Wei-Barn Chen ,  Chen-Chieh Chiang ,  Chii-Ming Wu ,  Chi-Cherng Jeng

IPC: H01L29/167 ,  H01L29/51 ,  H01L29/78 ,  H01L21/3115 ,  H01L21/8238 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/02 ,  H01L27/092

CPC classification number: H01L27/0922 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/3105 ,  H01L21/823821 ,  H01L27/0924

Abstract: Semiconductor devices and manufacturing method of the same are disclosed. A semiconductor device includes a substrate, a p-type MOS transistor, an n-type MOS transistor and a cured flowable oxide layer. The substrate includes a first region and a second region. The p-type MOS transistor is in the first region. The n-type MOS transistor is in the second region. The cured flowable oxide layer covers the p-type MOS transistor and the n-type MOS transistor, wherein a first strain of the cured flowable oxide layer applying to the p-type MOS transistor is different from a second strain of the cured flowable oxide layer applying to the n-type MOS transistor, and the difference therebetween is greater than 0.002 Gpa.