公开(公告)号：US09837306B2

公开(公告)日：2017-12-05

申请号：US15145369

申请日：2016-05-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Wen Wu ,  Shiu-Ko Jangjian ,  Chien-Wen Chiu ,  Chien-Chung Chen

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76831 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

Abstract: An interconnection structure includes a first dielectric layer, a bottom conductive feature present in the first dielectric layer, a second dielectric layer present on the first dielectric layer, an aluminum-containing etch stop layer present between the first dielectric layer and the second dielectric layer, an upper conductive via present at least in the second dielectric layer and electrically connected to the bottom conductive feature, and at least one aluminum-containing fragment present at least at a bottom corner of the upper conductive via.

公开(公告)号：US09209339B2

公开(公告)日：2015-12-08

申请号：US14099481

申请日：2013-12-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Hung-Chang Chang ,  Chun-Yuan Hsu ,  Chien-Chung Chen ,  Yung-Hsieh Lin

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0232

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L31/02327 ,  H01L31/18

Abstract: Embodiments of mechanisms of a backside illuminated image sensor structure are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.

Abstract translation: 提供背面照明图像传感器结构的机构的实施例。 背面照明图像传感器结构包括具有前侧和后侧的器件基板和形成在基板的前侧的像素。 背面照明图像传感器结构还包括形成在基板的背面上的电介质层中的金属元件和形成在电介质层上的滤色器层。 此外，金属元件被配置为在器件衬底中形成遮光区域并由铜制成。

公开(公告)号：US20140264707A1

公开(公告)日：2014-09-18

申请号：US14291076

申请日：2014-05-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： En-Ting Lee ,  Kun-El Chen ,  Yu-Sheng Wang ,  Chien-Chung Chen ,  Huai-Tei Yang

IPC: H01L31/0352 ,  H01L27/146

CPC classification number: H01L31/0352 ,  H01L21/26513 ,  H01L27/1446 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

Abstract: The present disclosure relates to a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the BSI CSI has a semiconductor substrate with a front-side and a back-side. A plurality of photodetectors are located within the front-side of the semiconductor substrate. An implantation region is located within the semiconductor substrate at a position separated from the plurality of photodetectors. The implantation region is disposed below the plurality of photodetectors and has a non-uniform doping concentration along a lateral plane parallel to the back-side of the semiconductor substrate. The non-uniform doping concentration allows for the BSI CSI to achieve a small total thickness variation (TTV) between one or more photodetectors and a back-side of a thinned semiconductor substrate that provides for good device performance.

Abstract translation: 本公开涉及背面照明CMOS图像传感器（BSI CIS）。 在一些实施例中，BSI CSI具有前侧和后侧的半导体衬底。 多个光电探测器位于半导体衬底的前侧内。 注入区域位于与多个光电检测器分离的位置内的半导体衬底内。 注入区域设置在多个光电检测器的下方，并且沿着平行于半导体衬底的背面的横向平面具有不均匀的掺杂浓度。 不均匀掺杂浓度允许BSI CSI在一个或多个光电检测器与减薄的半导体衬底的背面之间实现小的总厚度变化（TTV），从而提供良好的器件性能。

公开(公告)号：US10553672B2

公开(公告)日：2020-02-04

申请号：US14103651

申请日：2013-12-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yan-Jhih Huang ,  Chun-Yuan Hsu ,  Chien-Chung Chen ,  Yung-Hsieh Lin

IPC: H01L49/02 ,  H01L23/522

Abstract: A metal-insulator-metal (MIM) capacitor includes a semiconductor substrate and a capacitor device. The capacitor device includes a first conductor upright on the semiconductor substrate, a second conductor upright on the semiconductor substrate, and an insulator disposed used for insulating the first conductor from the second conductor. In a method for fabricating the capacitor device, a mask including a test line pattern and a capacitor pattern with a first trench pattern and a second trench pattern is used to form a test line and the first conductor and the second conductor of the capacitor device, thereby decreasing the cost of for fabricating the MIM capacitor.

公开(公告)号：US09257581B2

公开(公告)日：2016-02-09

申请号：US14291076

申请日：2014-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： En-Ting Lee ,  Kun-El Chen ,  Yu-Sheng Wang ,  Chien-Chung Chen ,  Huai-Tei Yang

IPC: H01L27/146 ,  H01L31/0352 ,  H01L27/144 ,  H01L21/265

CPC classification number: H01L31/0352 ,  H01L21/26513 ,  H01L27/1446 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

Abstract: The present disclosure relates to a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the BSI CSI has a semiconductor substrate with a front-side and a back-side. A plurality of photodetectors are located within the front-side of the semiconductor substrate. An implantation region is located within the semiconductor substrate at a position separated from the plurality of photodetectors. The implantation region is disposed below the plurality of photodetectors and has a non-uniform doping concentration along a lateral plane parallel to the back-side of the semiconductor substrate. The non-uniform doping concentration allows for the BSI CSI to achieve a small total thickness variation (TTV) between one or more photodetectors and a back-side of a thinned semiconductor substrate that provides for good device performance.

Abstract translation: 本公开涉及背面照明CMOS图像传感器（BSI CIS）。 在一些实施例中，BSI CSI具有前侧和后侧的半导体衬底。 多个光电探测器位于半导体衬底的前侧内。 注入区域位于与多个光电检测器分离的位置内的半导体衬底内。 注入区域设置在多个光电检测器的下方，并且沿着平行于半导体衬底的背面的横向平面具有不均匀的掺杂浓度。 不均匀掺杂浓度允许BSI CSI在一个或多个光电检测器与减薄的半导体衬底的背面之间实现小的总厚度变化（TTV），从而提供良好的器件性能。

公开(公告)号：US09620550B2

公开(公告)日：2017-04-11

申请号：US14935861

申请日：2015-11-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Chang Chang ,  Chun-Yuan Hsu ,  Chien-Chung Chen ,  Yung-Hsieh Lin

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L31/02327 ,  H01L31/18

Abstract: Backside illuminated image sensor structures are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.

公开(公告)号：US10332787B2

公开(公告)日：2019-06-25

申请号：US15633992

申请日：2017-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Wen Wu ,  Chien-Wen Chiu ,  Chien-Chung Chen ,  Shiu-Ko Jangjian

IPC: H01L21/76 ,  H01L21/768

Abstract: Formation methods of a semiconductor device structure are provided. A method includes forming a dielectric layer over a first conductive feature and a second conductive feature. The method also includes depositing a conformal layer in a first via hole and a second via hole in the dielectric layer. The method further includes removing the conformal layer in the second via hole. The dielectric layer remains covered by the conformal layer in the first via hole. In addition, the method includes etching the conformal layer in the first via hole and the dielectric layer until the first conductive feature and the second conductive feature become exposed through the first via hole and the second via hole, respectively. The method also includes forming a third conductive feature in the first via hole and a fourth conductive feature in the second via hole.