公开(公告)号：US20240258387A1

公开(公告)日：2024-08-01

申请号：US18314446

申请日：2023-05-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Syuan Siao ,  Meng-Han Chou ,  Chien-Yu Lin ,  Wei-Ting Chang ,  Tien-Shun Chang ,  Chin-I Kuan ,  Su-Hao Liu ,  Chi On Chui

IPC: H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: In an embodiment, a device includes: a first semiconductor nanostructure; a second semiconductor nanostructure adjacent the first semiconductor nanostructure; a first source/drain region on a first sidewall of the first semiconductor nanostructure; a second source/drain region on a second sidewall of the second semiconductor nanostructure, the second source/drain region completely separated from the first source/drain region; and a source/drain contact between the first source/drain region and the second source/drain region.