公开(公告)号：US20180286634A1

公开(公告)日：2018-10-04

申请号：US15997914

申请日：2018-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Jr-Sheng Chen ,  Yin-Tun Chou ,  Chih-Hua Chan ,  Lin-Ching Huang ,  Yu-Pei Chiang

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/82 ,  H01L21/308 ,  H01L21/027 ,  H01L21/3065

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.

公开(公告)号：US09997336B2

公开(公告)日：2018-06-12

申请号：US15138499

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Jr-Sheng Chen ,  Yin-Tun Chou ,  Chih-Hua Chan ,  Lin-Ching Huang ,  Yu-Pei Chiang

IPC: H01L21/67 ,  H01L21/82 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/027

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/32449 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/82 ,  H01L22/12

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.

公开(公告)号：US20170309500A1

公开(公告)日：2017-10-26

申请号：US15138499

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Jr-Sheng Chen ,  Yin-Tun Chou ,  Chih-Hua Chan ,  Lin-Ching Huang ,  Yu-Pei Chiang

IPC: H01L21/67 ,  H01L21/82 ,  H01J37/32 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/308

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/32449 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/82 ,  H01L22/12

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.

公开(公告)号：US10957516B2

公开(公告)日：2021-03-23

申请号：US15997914

申请日：2018-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Jr-Sheng Chen ,  Yin-Tun Chou ,  Chih-Hua Chan ,  Lin-Ching Huang ,  Yu-Pei Chiang

IPC: H01J37/32 ,  H01L21/82 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/027

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.