公开(公告)号：US20170309500A1

公开(公告)日：2017-10-26

申请号：US15138499

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Jr-Sheng Chen ,  Yin-Tun Chou ,  Chih-Hua Chan ,  Lin-Ching Huang ,  Yu-Pei Chiang

IPC: H01L21/67 ,  H01L21/82 ,  H01J37/32 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/308

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/32449 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/82 ,  H01L22/12

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.

公开(公告)号：US20180286634A1

公开(公告)日：2018-10-04

申请号：US15997914

申请日：2018-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Jr-Sheng Chen ,  Yin-Tun Chou ,  Chih-Hua Chan ,  Lin-Ching Huang ,  Yu-Pei Chiang

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/82 ,  H01L21/308 ,  H01L21/027 ,  H01L21/3065

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.

公开(公告)号：US12286706B2

公开(公告)日：2025-04-29

申请号：US17187410

申请日：2021-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Yi Shen ,  Hsin-Lin Wu ,  Yao-Fong Dai ,  Pei-Yuan Tai ,  Chin-Wei Chen ,  Yin-Tun Chou ,  Yuan-Hsin Chi ,  Sheng-Yuan Lin

IPC: C23C14/56 ,  C23C14/50 ,  C23C16/455 ,  H01L21/687

Abstract: The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.

公开(公告)号：US12142514B2

公开(公告)日：2024-11-12

申请号：US17459827

申请日：2021-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Chou ,  Yuan-Hsin Chi ,  Yin-Tun Chou ,  Hung-Chih Wang ,  Yu-Chi Liu ,  Chih-Ming Wang

IPC: H01L21/687 ,  H01L21/285 ,  H01L21/768

Abstract: A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.

公开(公告)号：US10957516B2

公开(公告)日：2021-03-23

申请号：US15997914

申请日：2018-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Jr-Sheng Chen ,  Yin-Tun Chou ,  Chih-Hua Chan ,  Lin-Ching Huang ,  Yu-Pei Chiang

IPC: H01J37/32 ,  H01L21/82 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/027

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.

公开(公告)号：US11211354B2

公开(公告)日：2021-12-28

申请号：US16203366

申请日：2018-11-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hang Chang ,  Richard Huang ,  I-shi Wang ,  Yin-Tun Chou ,  Jen-Hao Liu

IPC: B23K37/00 ,  H01L23/00

Abstract: In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.

公开(公告)号：US20190164929A1

公开(公告)日：2019-05-30

申请号：US16203366

申请日：2018-11-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hang Chang ,  Richard Huang ,  I-Shi Wang ,  Yin-Tun Chou ,  Jen-Hao Liu

IPC: H01L23/00

Abstract: In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.

公开(公告)号：US09997336B2

公开(公告)日：2018-06-12

申请号：US15138499

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han Meng ,  Jr-Sheng Chen ,  Yin-Tun Chou ,  Chih-Hua Chan ,  Lin-Ching Huang ,  Yu-Pei Chiang

IPC: H01L21/67 ,  H01L21/82 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/027

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/32449 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/82 ,  H01L22/12

Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.