公开(公告)号：US20200211809A1

公开(公告)日：2020-07-02

申请号：US16698072

申请日：2019-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng YEN ,  Jen-Chung CHIU ,  Tai-Kun KAO ,  Lu-Hsun LIN ,  Tsung-Min LIN

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

公开(公告)号：US20230386778A1

公开(公告)日：2023-11-30

申请号：US18448026

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng YEN ,  Jen-Chung CHIU ,  Tai-Kun KAO ,  Lu-Hsun LIN ,  Tsung-Min LIN

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J37/32541

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

公开(公告)号：US20240249906A1

公开(公告)日：2024-07-25

申请号：US18158357

申请日：2023-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Tang TSENG ,  Ching-Heng YEN ,  Tai-Kun KAO ,  Sheng-Tai PENG ,  Chun Yan CHEN

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0815

Abstract: An ion source head includes a curved liner that is configured to more closely and accurately repel, direct, or deflect ion species generated within an ion source cavity of an ion source container of an ion source head towards an ion beam opening that extends through the ion source container of the ion source head. This prevents or reduces the ion species from becoming trapped in the ion source cavity instead of exiting the ion source cavity through the ion beam opening that extends through the ion source container of the ion source head. The curved liner may be received by a curved structure of the ion source container of the ion source head. The ion source head may be utilized within an implanter tool to refine or process a solid target with the ion beam generated by the ion source head with the curved liner.

公开(公告)号：US20220199351A1

公开(公告)日：2022-06-23

申请号：US17693103

申请日：2022-03-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng YEN ,  Jen-Chung CHIU ,  Tai-Kun KAO ,  Lu-Hsun LIN ,  Tsung-Min LIN

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/317

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.