公开(公告)号：US20240234481A1

公开(公告)日：2024-07-11

申请号：US18150912

申请日：2023-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Shu Yang ,  Chun Yi Wu ,  Kai Tzeng ,  Yuh-Sen Chang ,  Chi-Cheng Chen ,  Chi-Chun Peng

IPC: H01L27/08

CPC classification number: H01L28/10

Abstract: A method of forming a semiconductor device, the method including forming a first insulation layer over a substrate, depositing a first stack of magnetic layers over the first insulation layer, etching the first stack of magnetic layers such that a sidewall of the first stack of magnetic layers forms a stairstep pattern, forming a first photosensitive layer over the first stack of magnetic layers, the first insulation layer, and the substrate, wherein a thickness of the first photosensitive layer above a center of a first step of the stairstep pattern is different from a thickness of the first photosensitive layer above a center of a second step of the stairstep pattern, forming a first conductive feature over the first photosensitive layer, depositing a second insulation layer over the first photosensitive layer and the first conductive feature, and depositing a second magnetic layer over the second insulation layer.

公开(公告)号：US20230290809A1

公开(公告)日：2023-09-14

申请号：US17828844

申请日：2022-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mei-Chi Lee ,  Chi-Cheng Chen ,  Wei-Li Huang ,  Kai Tzeng ,  Chun Yi Wu ,  Ming-Da Cheng

IPC: H01L49/02

CPC classification number: H01L28/10

Abstract: A method of forming a semiconductor device includes: forming a passivation layer over a conductive pad that is disposed over a substrate; and forming an inductive component over the passivation layer, including: forming a first insulation layer and a first magnetic layer successively over the passivation layer; forming a first polymer layer over the first magnetic layer; forming a first conductive feature over the first polymer layer; forming a second polymer layer over the first polymer layer and the first conductive feature; patterning the second polymer layer, where after the patterning, a first sidewall of the second polymer layer includes multiple segments, where an extension of a first segment of the multiple segments intersects the second polymer layer; and after patterning the second polymer layer, forming a second insulation layer and a second magnetic layer successively over the second polymer layer.