公开(公告)号：US20200057376A1

公开(公告)日：2020-02-20

申请号：US16102887

申请日：2018-08-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Chia HSU ,  Chi YANG ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: A lithography method includes outputting, by an optical alignment sensor in a scanner system, a first signal in response to a light signal received by the optical alignment sensor; controlling, by a controller, a trajectory of a droplet in a light source system according to the first signal feedback to the controller; and irradiating the droplet by a drive laser to output a light beam from the light source system to the scanner system.

公开(公告)号：US20200060015A1

公开(公告)日：2020-02-20

申请号：US16535005

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Chia HSU ,  Po-Chung CHENG ,  Li-Jui CHEN ,  Shang-Chieh CHIEN ,  Yen-Shuo SU ,  Chieh HSIEH ,  Chi YANG

IPC: H05G2/00 ,  G02B7/182

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation comprises a droplet generator, an excitation laser source, an energy detector, and a feedback controller. The droplet generator is configured to generate target droplets. The excitation laser is configured to generate a pre-pulse and a main pulse to convert the target droplets to plasma by heating. The energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. The feedback controller is configured to adjust a time delay between a subsequent pre-pulse and main pulse generated by the excitation laser based on the variation in EUV energy generated by a given main pulse.

公开(公告)号：US20200068696A1

公开(公告)日：2020-02-27

申请号：US16671347

申请日：2019-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Chun-Chia HSU ,  Bo-Tsun LIU ,  Tzung-CHI FU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G03F7/20

Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value, wherein the parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

公开(公告)号：US20210041787A1

公开(公告)日：2021-02-11

申请号：US17068197

申请日：2020-10-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh HSIEH ,  Kuan-Hung CHEN ,  Chun-Chia HSU ,  Shang-Chieh CHIEN ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US20200045800A1

公开(公告)日：2020-02-06

申请号：US16149643

申请日：2018-10-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia HSU ,  Kuan-Hung CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G21K1/06 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.

公开(公告)号：US20220059524A1

公开(公告)日：2022-02-24

申请号：US16996986

申请日：2020-08-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia HSU ,  Tung-Heng HSIEH ,  Yung-Feng CHANG ,  Bao-Ru YOUNG ,  Jam-Wem LEE ,  Chih-Hung WANG

IPC: H01L27/02 ,  H01L29/861 ,  H01L29/06

Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of first semiconductor layers and a plurality of second semiconductor layers. The first semiconductor layers and the second semiconductor layers are alternatingly stacked over the semiconductor substrate and between the first and second epitaxy regions. Each of the first and second semiconductor layers has a first side contacting the first epitaxy region and a second side contacting the second epitaxy region, and the first side is opposite the second side.

公开(公告)号：US20200057382A1

公开(公告)日：2020-02-20

申请号：US16535003

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh HSIEH ,  Kuan-Hung CHEN ,  Chun-Chia HSU ,  Shang-Chieh CHIEN ,  Liu BO-TSUN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US20190150265A1

公开(公告)日：2019-05-16

申请号：US15868373

申请日：2018-01-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Chun-Chia HSU ,  Bo-Tsun LIU ,  Tzung-CHI FU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G03F7/20

Abstract: A method for generating light is provided. The method includes generating targets with a fuel target generator. The method further includes measuring a period of time during which one of the targets passes through two detection positions on a path along which the targets move. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the fuel target generator or the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value.