公开(公告)号：US20230378360A1

公开(公告)日：2023-11-23

申请号：US18361514

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ju-Li Huang ,  Hsin-Che Chiang ,  Yu-Chi Pan ,  Chun-Ming Yang ,  Chun-Sheng Liang ,  Ying-Liang Chuang ,  Ming-Hsi Yeh

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/285 ,  H01L29/40 ,  H01L21/3213 ,  H01L29/49

CPC classification number: H01L29/785 ,  H01L29/42372 ,  H01L21/28556 ,  H01L29/401 ,  H01L21/32134 ,  H01L29/4966

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

公开(公告)号：US11810978B2

公开(公告)日：2023-11-07

申请号：US17339020

申请日：2021-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ju-Li Huang ,  Hsin-Che Chiang ,  Yu-Chi Pan ,  Chun-Ming Yang ,  Chun-Sheng Liang ,  Ying-Liang Chuang ,  Ming-Hsi Yeh

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/285 ,  H01L29/40 ,  H01L21/3213 ,  H01L29/49

CPC classification number: H01L29/785 ,  H01L21/28556 ,  H01L21/32134 ,  H01L29/401 ,  H01L29/42372 ,  H01L29/4966

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

公开(公告)号：US11031500B2

公开(公告)日：2021-06-08

申请号：US16287368

申请日：2019-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ju-Li Huang ,  Chun-Sheng Liang ,  Ming-Hsi Yeh ,  Ying-Liang Chuang ,  Hsin-Che Chiang ,  Chun-Ming Yang ,  Yu-Chi Pan

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/285 ,  H01L29/40 ,  H01L21/3213 ,  H01L29/49

Abstract: The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.