Abstract:
An integrated circuit structure includes a plurality of power or ground rails for an integrated circuit, the plurality of power or ground rails vertically separated on a plane, a plurality of functional cells between the plurality of power rails or between the plurality of ground rails or both, and a jumper connection between the vertically separated power rails or ground rails, the jumper connection within a vertically aligned gap among the plurality of functional cells. A method of mitigating IR drop and electromigration affects in an integrated circuit includes forming a plurality of power rails or ground rails, each of the power rails or ground rails on separate vertical levels of a plane of an integrated circuit layout and connecting with a jumper connection at least two power rails or two ground rails, the jumper connection within a vertically aligned gap among cells of the integrated circuit.
Abstract:
A method includes providing a first layout of a semiconductor device comprising a plurality of cells representing circuit elements, and providing a cell library comprising a plurality of cells in a processor. The circuit elements comprise a plurality of fin field effect transistors (Fin-FETs). Each of the plurality of cells in the cell library is displayed with a respectively different marker indicating a respective fin height. The method further includes generating a second layout for the semiconductor device to be fabricated, by placing or replacing at least one cell from the cell library in a respective location in the first layout. The at least one cell from the cell library comprises a Fin-FET with a respective fin height different from an adjacent Fin-FET in the second layout.
Abstract:
An integrated circuit structure includes a plurality of power or ground rails for an integrated circuit, the plurality of power or ground rails vertically separated on a plane, a plurality of functional cells between the plurality of power rails or between the plurality of ground rails or both, and a jumper connection between the vertically separated power rails or ground rails, the jumper connection within a vertically aligned gap among the plurality of functional cells. A method of mitigating IR drop and electromigration affects in an integrated circuit includes forming a plurality of power rails or ground rails, each of the power rails or ground rails on separate vertical levels of a plane of an integrated circuit layout and connecting with a jumper connection at least two power rails or two ground rails, the jumper connection within a vertically aligned gap among cells of the integrated circuit.
Abstract:
A computer implemented method comprises accessing a 3D-IC model stored in a tangible, non-transitory machine readable medium, processing the model in a computer processor to generate a temperature map containing temperatures at a plurality of points of the 3D-IC under the operating condition; identifying an electromigration (EM) rating factor, and calculating and outputting from the processor data representing a temperature-dependent EM current constraint at each point.
Abstract:
Apparatus includes a machine readable storage medium for storing a template library having at least one template. The template is to include a first layout representation of at least one pattern to be formed by multi-patterning a single layer of an IC. The pattern has a plurality of portions to be formed using a plurality of respectively different photomasks. The first layout representation includes data identifying on which photomask each portion is to be located. An electronic design automation (EDA) tool includes a processor configured to receive a hardware description language representation of at least a part of a circuit and generate a second layout representation of the part of the circuit having a plurality of polygons. The EDA tool has a matching module that identifies and outputs an indication of whether one or more of the plurality of portions matches a subset of the plurality of polygons.
Abstract:
A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output.