公开(公告)号：US20210072181A1

公开(公告)日：2021-03-11

申请号：US17087112

申请日：2020-11-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen CHENG ,  Yi-Shao LIU ,  Fei-Lung LAI

IPC: G01N27/414 ,  H01L23/34 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

公开(公告)号：US20180313783A1

公开(公告)日：2018-11-01

申请号：US16021077

申请日：2018-06-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Wen CHENG ,  Yi-Shao LIU ,  Fei-Lung LAI

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

公开(公告)号：US20170315085A1

公开(公告)日：2017-11-02

申请号：US15649963

申请日：2017-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao LIU ,  Chun-Ren CHENG ,  Ching-Ray CHEN ,  Yi-Hsien CHANG ,  Fei-Lung LAI ,  Chun-Wen CHENG

IPC: G01N27/414 ,  H01L21/311 ,  H01L29/66

CPC classification number: G01N27/4145 ,  G01N27/4148 ,  H01L21/31105 ,  H01L27/088 ,  H01L29/66477

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.