公开(公告)号：US20230401885A1

公开(公告)日：2023-12-14

申请号：US18232756

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： You-Cheng JHANG ,  Han-Zong PAN ,  Wei-Ding WU ,  Jiu-Chun WENG ,  Hsin-Yu CHEN ,  Cheng-San CHOU ,  Chin-Min LIN

IPC: G06V40/13 ,  G02B27/30 ,  G06F3/041 ,  G06F21/32 ,  H01L27/146

CPC classification number: G06V40/13 ,  G02B27/30 ,  G06F3/0412 ,  G06F21/32 ,  H01L27/14625

Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.

公开(公告)号：US20230092567A1

公开(公告)日：2023-03-23

申请号：US17993319

申请日：2022-11-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： You-Cheng JHANG ,  Han-Zong PAN ,  Wei-Ding WU ,  Jiu-Chun WENG ,  Hsin-Yu CHEN ,  Cheng-San CHOU ,  Chin-Min LIN

IPC: G06V40/13 ,  G06F3/041 ,  G02B27/30 ,  H01L27/146 ,  G06F21/32

Abstract: Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.

公开(公告)号：US20190157378A1

公开(公告)日：2019-05-23

申请号：US15940075

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Guo-Jyun LUO ,  Shiuan-Jeng LIN ,  Chiu-Hua CHUNG ,  Chen-Chien CHANG ,  Han-Zong PAN

IPC: H01L49/02 ,  H01L27/06 ,  H01L21/285

Abstract: A semiconductor device structure and the formation method thereof are provided. The semiconductor device structure includes a semiconductor substrate and a first capacitor and a second capacitor over the semiconductor substrate. The first capacitor has a first capacitor dielectric layer, and the second capacitor has a second capacitor dielectric layer. The first capacitor dielectric layer is between the second capacitor dielectric layer and the semiconductor substrate. The first capacitor and the second capacitor are electrically connected in parallel. The first capacitor has a first linear temperature coefficient and a first quadratic voltage coefficient. The second capacitor has a second linear temperature coefficient and a second quadratic voltage coefficient. One or both of a first ratio of the first linear temperature coefficient to the second linear temperature coefficient and a second ratio of the first quadratic voltage coefficient to the second quadratic voltage coefficient is negative.

公开(公告)号：US20240361609A1

公开(公告)日：2024-10-31

申请号：US18770562

申请日：2024-07-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yu CHEN ,  Chun-Peng LI ,  Chia-Chun HUNG ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Jui-Chun WENG ,  Ji-Hong CHIANG ,  Yen Chiang LIU ,  Jiun-Jie CHIOU ,  Li-Yang TU ,  Jia-Syuan LI ,  You-Cheng JHANG ,  Shin-Hua CHEN ,  Lavanya SANAGAVARAPU ,  Han-Zong PAN ,  Hsi-Cheng HSU

IPC: G02B27/30 ,  H01L27/146 ,  H01L31/0232

CPC classification number: G02B27/30 ,  H01L27/14625 ,  H01L31/02325

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

公开(公告)号：US20230400699A1

公开(公告)日：2023-12-14

申请号：US18231760

申请日：2023-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yu CHEN ,  Yen-Chiang LIU ,  June-Jie CHIOU ,  Jia-Syuan LI ,  You-Cheng JHANG ,  Shin-Hua CHEN ,  LAVANYA SANAGAVARAPU ,  Han-Zong PAN ,  Chun-Peng LI ,  Chia-Chun HUNG ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Jui-Chun WENG ,  Ji-Hong CHIANG ,  Hsi-Cheng HSU

IPC: G02B27/30 ,  G02B5/20 ,  G02B26/00 ,  H01L27/146 ,  H01L31/0216 ,  G06V40/13

CPC classification number: G02B27/30 ,  G02B5/20 ,  G02B26/007 ,  H01L27/14625 ,  H01L31/02162 ,  H01L27/1462 ,  G06V40/1312 ,  B32B2551/00 ,  G06V40/1318

Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.

公开(公告)号：US20220373815A1

公开(公告)日：2022-11-24

申请号：US17881439

申请日：2022-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yu CHEN ,  Chun-Peng LI ,  Chia-Chun HUNG ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Jui-Chun WENG ,  Ji-Hong CHIANG ,  Yen-Chiang LIU ,  Jiun-Jie CHIOU ,  Li-Yang TU ,  Jia-Syuan LI ,  You-Cheng JHANG ,  Shin-Hua CHEN ,  Lavanya SANAGAVARAPU ,  Han-Zong PAN ,  Hsi-Cheng HSU

IPC: G02B27/30 ,  H01L31/0232 ,  H01L27/146

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

公开(公告)号：US20230359056A1

公开(公告)日：2023-11-09

申请号：US18222344

申请日：2023-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yu CHEN ,  Chun-Peng LI ,  Chia-Chun HUNG ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Jui-Chun WENG ,  JI-Hong CHIANG ,  Yen-Chiang LIU ,  Jiun-Jie CHIOU ,  Li-Yang TU ,  Jia-Syuan LI ,  You-Cheng JHANG ,  Shin-Hua CHEN ,  Lavanya SANAGAVARAPU ,  Han-Zong PAN ,  Hsi-Cheng HSU

IPC: G02B27/30 ,  H01L31/0232 ,  H01L27/146

CPC classification number: G02B27/30 ,  H01L31/02325 ,  H01L27/14625

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

公开(公告)号：US20210116714A1

公开(公告)日：2021-04-22

申请号：US16656290

申请日：2019-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yu CHEN ,  Yen-Chiang LIU ,  Jiun-Jie CHIOU ,  Jia-Syuan LI ,  You-Cheng JHANG ,  Shin-Hua CHEN ,  Lavanya SANAGAVARAPU ,  Han-Zong PAN ,  Chun-Peng LI ,  Chia-Chun HUNG ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Jui-Chun WENG ,  Ji-Hong CHIANG ,  Hsi-Cheng HSU

IPC: G02B27/30 ,  G02B5/20 ,  G02B26/00

Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.

公开(公告)号：US20210116713A1

公开(公告)日：2021-04-22

申请号：US16655763

申请日：2019-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yu CHEN ,  Chun-Peng LI ,  Chia-Chun HUNG ,  Ching-Hsiang HU ,  Wei-Ding WU ,  Jui-Chun WENG ,  Ji-Hong CHIANG ,  Yen-Chiang LIU ,  Jiun-Jie CHIOU ,  Li-Yang TU ,  Jia-Syuan LI ,  You-Cheng JHANG ,  Shin-Hua CHEN ,  Lavanya SANAGAVARAPU ,  Han-Zong PAN ,  Hsi-Cheng HSU

IPC: G02B27/30 ,  H01L27/146 ,  H01L31/0232

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.