公开(公告)号：US20180342595A1

公开(公告)日：2018-11-29

申请号：US15628740

申请日：2017-06-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hsin-Che CHIANG ,  Ju-Yuan TZENG ,  Chun-Sheng LIANG ,  Shu-Hui WANG ,  Chih-Yang YEH ,  Jeng-Ya David YEH

IPC分类号： H01L29/423 ,  H01L29/49 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8234

摘要： A semiconductor device includes a substrate, a first dielectric layer, a first device and a second device. The first dielectric layer is disposed on the substrate. The first device is disposed on the first dielectric layer on a first region of the substrate, and includes two first spacers, a second dielectric layer and a first gate structure. The first spacers are separated to form a first trench. The second dielectric layer is disposed on side surfaces and a bottom surface of the first trench. The first gate structure is disposed on the second dielectric layer. The second device is disposed on a second region of the substrate, and includes two second spacers and a second gate structure. The second spacers are disposed on the first dielectric layer and are separated to form a second trench. The second gate structure is disposed on the substrate within the second trench.

公开(公告)号：US20180350956A1

公开(公告)日：2018-12-06

申请号：US15629862

申请日：2017-06-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hsin-Che CHIANG ,  Ju-Yuan TZENG ,  Chun-Sheng LIANG ,  Shu-Hui WANG ,  Chih-Yang YEH ,  Jeng-Ya David YEH

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/423

CPC分类号： H01L29/66795 ,  H01L29/42364 ,  H01L29/66545 ,  H01L29/785

摘要： In a method for manufacturing a semiconductor device, a first raised structure is formed on a surface of a substrate. The first raised structure includes a top surface and a side surface adjoining the top surface. The side surface includes an upper portion, a middle portion, and a lower portion. A deposition operation is performed with a precursor to form a first film on the top surface, the upper portion and the lower portion of the side surface, and the surface of the substrate. Performing the deposition operation includes controlling a saturated vapor pressure of the precursor. A re-deposition operation is performed on the first film and the first raised structure, so as to form a film structure. A thickness of the film structure on the middle portion of the side surface is smaller than a thickness of the film structure on the top surface.

公开(公告)号：US20210313437A1

公开(公告)日：2021-10-07

申请号：US17353606

申请日：2021-06-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hsin-Che CHIANG ,  Ju-Yuan TZENG ,  Chun-Sheng LIANG ,  Chih-Yang YEH ,  Shu-Hui WANG ,  Jeng-Ya David YEH

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L21/28

摘要： A semiconductor device includes a substrate comprising a semiconductor fin, a gate structure over the semiconductor fin, and source/drain structures over the semiconductor fin and on opposite sides of the gate structure. The gate stack comprises a high-k dielectric layer; a first work function metal layer over the high-k dielectric layer; an oxide of the first work function metal layer over the first work function metal layer; and a second work function metal layer over the oxide of the first work function metal layer, in which the first and second work function metal layers have different compositions; and a gate electrode over the second work function metal layer.

公开(公告)号：US20180145149A1

公开(公告)日：2018-05-24

申请号：US15355901

申请日：2016-11-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Che CHIANG ,  Ju-Yuan TZENG ,  Chun-Sheng LIANG ,  Shu-Hui WANG ,  Kuo-Hua PAN

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/51 ,  H01L21/02

CPC分类号： H01L29/66545 ,  H01L21/02183 ,  H01L21/0228 ,  H01L21/28088 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A method of forming a gate structure of a semiconductor device including depositing a high-k dielectric layer over a substrate is provided. A dummy metal layer is formed over the high-k dielectric layer. The dummy metal layer includes fluorine. A high temperature process is performed to drive the fluorine from the dummy metal layer into the high-k dielectric layer thereby forming a passivated high-k dielectric layer. Thereafter, the dummy metal layer is removed. At least one work function layer over the passivated high-k dielectric layer is formed. A fill metal layer is formed over the at least one work function layer.

公开(公告)号：US20200075741A1

公开(公告)日：2020-03-05

申请号：US16678642

申请日：2019-11-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hsin-Che CHIANG ,  Ju-Yuan TZENG ,  Chun-Sheng LIANG ,  Shu-Hui WANG ,  Chih-Yang YEH ,  Jeng-Ya David YEH

IPC分类号： H01L29/423 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L29/49

摘要： A semiconductor device includes a substrate, a first gate structure, a plurality of first gate spacers, a second gate structure, and a plurality of second gate spacers. The substrate has a first fin structure and a second fin structure. The first gate structure is over the first fin structure, in which the first gate structure includes a first high dielectric constant material and a first metal. A bottom surface of the first high dielectric constant material is higher than bottom surfaces of the first gate spacers. The second gate structure is narrower than the first gate structure and over the second fin structure, in which the second gate structure includes a second high dielectric constant material and a second metal. A bottom surface of the second high dielectric constant material is lower than bottom surfaces of the second gate spacers.

公开(公告)号：US20190393326A1

公开(公告)日：2019-12-26

申请号：US16556531

申请日：2019-08-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Che CHIANG ,  Ju-Yuan TZENG ,  Chun-Sheng LIANG ,  Shu-Hui WANG ,  Kuo-Hua PAN

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/3115 ,  H01L29/78 ,  H01L21/28 ,  H01L29/49 ,  H01L29/40 ,  H01L29/51

摘要： A method of forming a gate structure of a semiconductor device including depositing a high-k dielectric layer over a substrate is provided. A dummy metal layer is formed over the high-k dielectric layer. The dummy metal layer includes fluorine. A high temperature process is performed to drive the fluorine from the dummy metal layer into the high-k dielectric layer thereby forming a passivated high-k dielectric layer. Thereafter, the dummy metal layer is removed. At least one work function layer over the passivated high-k dielectric layer is formed. A fill metal layer is formed over the at least one work function layer.

公开(公告)号：US20190165117A1

公开(公告)日：2019-05-30

申请号：US16115390

申请日：2018-08-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hsin-Che CHIANG ,  Ju-Yuan TZENG ,  Chun-Sheng LIANG ,  Chih-Yang YEH ,  Shu-Hui WANG ,  Jeng-Ya David YEH

IPC分类号： H01L29/423 ,  H01L29/78 ,  H01L29/66

摘要： A semiconductor device includes a substrate, a gate stack. The substrate includes a semiconductor fin. The gate stack is disposed on the semiconductor fin. The gate stack includes a dielectric layer disposed over the semiconductor fin, and a metal stack disposed over the dielectric layer and having a first metallic layer and a second metallic layer over the first metallic layer, and a gate electrode disposed over the metal stack. The first metallic layer and the second metallic layer have a first element, and a percentage of the first element in the first metallic layer is greater than that in the second metallic layer.