公开(公告)号：US20230008496A1

公开(公告)日：2023-01-12

申请号：US17371288

申请日：2021-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mrunal Abhijith Khaderbad ,  Keng-Chu Lin ,  Ko-Feng Chen ,  Yu-Yun Peng

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L21/8234

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, first and second contact structures proximate to each other and over the substrate, and first and second dielectric layers formed over the first and second contact structures, respectively. A top portion of the first dielectric layer can include a first dielectric material. A bottom portion of the first dielectric layer can include a second dielectric material different from the first dielectric material. The second dielectric layer can include a third dielectric material different from the first dielectric material.

公开(公告)号：US11942358B2

公开(公告)日：2024-03-26

申请号：US17200223

申请日：2021-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mrunal Abhijith Khaderbad ,  Ko-Feng Chen ,  Zheng-Yong Liang ,  Chen-Han Wang ,  De-Yang Chiou ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/8234

CPC classification number: H01L21/76224 ,  H01L21/31116 ,  H01L21/823481

Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.

公开(公告)号：US11798985B2

公开(公告)日：2023-10-24

申请号：US17097959

申请日：2020-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mrunal Abhijith Khaderbad ,  Dhanyakumar Mahaveer Sathaiya ,  Huicheng Chang ,  Ko-Feng Chen ,  Keng-Chu Lin

IPC: H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L27/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/822

CPC classification number: H01L29/0653 ,  H01L21/02326 ,  H01L21/8221 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696 ,  H01L21/823814

Abstract: The present disclosure is directed to a method for the fabrication of isolation structures between source/drain (S/D)) epitaxial structures of stacked transistor structures. The method includes depositing an oxygen-free dielectric material in an opening over a first epitaxial structure, where the oxygen-free dielectric material covers top surfaces of the first epitaxial structure and sidewall surfaces of the opening. The method also includes exposing the oxygen-free dielectric material to an oxidizing process to oxidize the oxygen-free dielectric material so that the oxidizing process does not oxidize a portion of the oxygen-free dielectric material on the first epitaxial structure. Further, etching the oxidized oxygen-free dielectric material and forming a second epitaxial layer on the oxygen-free dielectric material not removed by the etching to substantially the opening.

公开(公告)号：US20220293458A1

公开(公告)日：2022-09-15

申请号：US17200223

申请日：2021-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mrunal Abhijith Khaderbad ,  Ko-Feng Chen ,  Zheng Yong Liang ,  Chen-Han Wang ,  De-Yang Chiou ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/8234

Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures