公开(公告)号：US11092555B2

公开(公告)日：2021-08-17

申请号：US16933067

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Shang-Chieh Chien ,  Shang-Ying Wu ,  Li-Kai Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Anthony Yen ,  Chia-Chen Chen

IPC: G01N21/88 ,  G01N21/954 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956 ,  G01N21/94

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

公开(公告)号：US10361134B2

公开(公告)日：2019-07-23

申请号：US15800568

申请日：2017-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chih Lai ,  Li-Kai Cheng ,  Shun-Jung Chen ,  Bo-Tsun Liu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Li-Jui Chen

IPC: G03B27/52 ,  H01L21/66 ,  H01L21/027 ,  G03F7/20 ,  H01L21/67

Abstract: A method for performing a lithographic process over a semiconductor wafer is provided. The method includes coating a photoresist layer over a material layer which is formed on the semiconductor wafer in a track apparatus. The method further includes transferring the semiconductor wafer from the track apparatus to an exposure apparatus. The method also includes measuring a height of the photoresist layer before the removal of the semiconductor wafer from the track apparatus. In addition, the method includes measuring height of the material layer in the exposure apparatus. The method also includes determining a focal length for exposing the semiconductor wafer according to the height of the photoresist layer and the height of the material layer.

公开(公告)号：US10429314B2

公开(公告)日：2019-10-01

申请号：US15883971

申请日：2018-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Shang-Chieh Chien ,  Shang-Ying Wu ,  Li-Kai Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Anthony Yen ,  Chia-Chen Chen

IPC: G01N21/94 ,  G01N21/88 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

公开(公告)号：US10718718B2

公开(公告)日：2020-07-21

申请号：US16587010

申请日：2019-09-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Shang-Chieh Chien ,  Shang-Ying Wu ,  Li-Kai Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Anthony Yen ,  Chia-Chen Chen

IPC: G01N21/94 ,  G03F7/00 ,  G01N21/88 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956 ,  G01N21/954

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.