-
公开(公告)号：US10718718B2
公开(公告)日：2020-07-21
申请号：US16587010
申请日：2019-09-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Shang-Chieh Chien , Shang-Ying Wu , Li-Kai Cheng , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng , Anthony Yen , Chia-Chen Chen
IPC: G01N21/94 , G03F7/00 , G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/954
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
-
Patent Agency Ranking
公开(公告)号：US11092555B2
公开(公告)日：2021-08-17
申请号：US16933067
申请日：2020-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Shang-Chieh Chien , Shang-Ying Wu , Li-Kai Cheng , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng , Anthony Yen , Chia-Chen Chen
IPC: G01N21/88 , G01N21/954 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/94
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
-
公开(公告)号：US11272606B2
公开(公告)日：2022-03-08
申请号：US15801225
申请日：2017-11-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Shang-Chieh Chien , Po-Chung Cheng , Chia-Chen Chen , Jen-Yang Chung , Li-Jui Chen , Tzung-Chi Fu , Shang-Ying Wu
Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.
-
公开(公告)号：US10429314B2
公开(公告)日：2019-10-01
申请号：US15883971
申请日：2018-01-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis Chang , Shang-Chieh Chien , Shang-Ying Wu , Li-Kai Cheng , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng , Anthony Yen , Chia-Chen Chen
IPC: G01N21/94 , G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
-
公开(公告)号：US10928741B2
公开(公告)日：2021-02-23
申请号：US16876442
申请日：2020-05-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shang-Ying Wu , Shang-Chieh Chien , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
-
公开(公告)号：US10656539B2
公开(公告)日：2020-05-19
申请号：US16117545
申请日：2018-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shang-Ying Wu , Shang-Chieh Chien , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
-
-
-
-
-
Search Results
6
records
(took 0.013 seconds)
