公开(公告)号：US20200083112A1

公开(公告)日：2020-03-12

申请号：US16687152

申请日：2019-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Wei YU ,  Chia Ping LO ,  Liang-Gi YAO ,  Weng CHANG ,  Yee-Chia YEO ,  Ziwei FANG

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/324 ,  H01L21/268 ,  H01L21/02 ,  H01L21/8234

Abstract: A method includes providing a substrate including a first fin element and a second fin element extending from the substrate, and forming a first layer including a first material over the first and second fin elements, wherein the first layer includes a gap disposed between the first and second fin elements. An anneal process is performed to remove the gap in the first layer, wherein performing the anneal process includes adjusting an energy applied to the first layer during the anneal process. The gap is filled by a portion of the first material around the gap reaching a sub-melt temperature that is different from a melting point of the first material.

公开(公告)号：US20180308765A1

公开(公告)日：2018-10-25

申请号：US16016862

申请日：2018-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Wei YU ,  Chia Ping LO ,  Liang-Gi YAO ,  Weng CHANG ,  Yee-Chia YEO ,  Ziwei FANG

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H01L29/66

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method includes providing a substrate including a first fin element and a second fin element extending from the substrate. A first layer including an amorphous material is formed over the first and second fin elements, where the first layer includes a gap disposed between the first and second fin elements. An anneal process is performed to remove the gap in the first layer. The amorphous material of the first layer remains amorphous during the performing of the anneal process.

公开(公告)号：US20180096898A1

公开(公告)日：2018-04-05

申请号：US15282981

申请日：2016-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Wei YU ,  Chia-Ping LO ,  Liang-Gi YAO ,  Weng CHANG ,  Yee-Chia YEO ,  Ziwei FANG

IPC: H01L21/8238 ,  H01L29/66

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of semiconductor device fabrication includes providing a substrate including a first fin element and a second fin element extending from the substrate. A first layer is formed over the first and second fin elements, where the first layer includes a gap. A laser anneal process is performed to the substrate to remove the gap in the first layer. An energy applied to the first layer during the laser anneal process is adjusted based on a height of the first layer.

公开(公告)号：US20150011059A1

公开(公告)日：2015-01-08

申请号：US14497920

申请日：2014-09-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua YU ,  Liang-Gi YAO ,  Cheng-Tung LIN

IPC: H01L21/8238 ,  H01L29/51 ,  H01L29/49 ,  H01L21/265 ,  H01L21/28

CPC classification number: H01L21/823857 ,  H01L21/26566 ,  H01L21/28035 ,  H01L21/28158 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/4916 ,  H01L29/518

Abstract: A layer of P-metal material having a work function of about 4.3 or 4.4 eV or less is formed over a high-k dielectric layer. Portions of the N-metal layer are converted to P-metal materials by introducing additives such as O, C, N, Si or others to produce a P-metal material having an increased work function of about 4.7 or 4.8 eV or greater. A TaC film may be converted to a material of TaCO, TaCN, or TaCON using this technique. The layer of material including original N-metal portions and converted P-metal portions is then patterned using a single patterning operation to simultaneously form semiconductor devices from both the unconverted N-metal sections and converted P-metal sections.

Abstract translation: 在高k电介质层上形成功函数约4.3或4.4eV或更小的P金属材料层。 通过引入添加剂如O，C，N，Si等将N金属层的一部分转化为P金属材料，以产生具有约4.7或4.8eV或更大功函数的P金属材料。 使用这种技术可以将TaC膜转变为TaCO，TaCN或TaCON的材料。 然后使用单一图案化操作来构图包括原始N-金属部分和转换的P金属部分的材料层，以同时从未转换的N金属部分和转换的P金属部分形成半导体器件。