公开(公告)号：US11688728B2

公开(公告)日：2023-06-27

申请号：US17382565

申请日：2021-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing-Cheng Lin ,  Jui-Pin Hung ,  Hsien-Wen Liu ,  Min-Chen Lin

IPC: H01L25/00 ,  H01L23/525 ,  H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L23/532 ,  H01L23/538 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/56 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/525 ,  H01L23/5329 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/81 ,  H01L25/065 ,  H01L21/568 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/11013 ,  H01L2224/1134 ,  H01L2224/1148 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/96 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/96 ,  H01L2224/03 ,  H01L2224/96 ,  H01L2224/11 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/13147 ,  H01L2924/00014

Abstract: An embodiment integrated circuit structure includes a substrate, a metal pad over the substrate, a post-passivation interconnect (PPI) structure over the substrate and electronically connected to the metal pad, a first polymer layer over the PPI structure, an under bump metallurgy (UBM) extending into an opening in the first polymer layer and electronically connected to the PPI structure, and a barrier layer on a top surface of the first polymer layer adjacent to the UBM.

公开(公告)号：US20210351173A1

公开(公告)日：2021-11-11

申请号：US17382565

申请日：2021-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing-Cheng Lin ,  Jui-Pin Hung ,  Hsien-Wen Liu ,  Min-Chen Lin

IPC: H01L25/00 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L23/525 ,  H01L23/532 ,  H01L23/538 ,  H01L21/56 ,  H01L25/065

Abstract: An embodiment integrated circuit structure includes a substrate, a metal pad over the substrate, a post-passivation interconnect (PPI) structure over the substrate and electronically connected to the metal pad, a first polymer layer over the PPI structure, an under bump metallurgy (UBM) extending into an opening in the first polymer layer and electronically connected to the PPI structure, and a barrier layer on a top surface of the first polymer layer adjacent to the UBM.