公开(公告)号：US20190123184A1

公开(公告)日：2019-04-25

申请号：US16227931

申请日：2018-12-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Harry-Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Chi-Wen Liu ,  Ming Zhu

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L21/324 ,  H01L29/423 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/265 ,  H01L29/06 ,  H01L29/786

摘要： Tunneling field-effect transistors (TFETs) and associated methods of fabrication are disclosed herein. An exemplary TFET includes a protrusion that extends vertically from a substrate. A drain region is in a bottommost portion of the protrusion. A source region is in a topmost portion of the protrusion. A gate stack that wraps a middle portion of the protrusion. The gate stack further wraps around a portion of the source region and a portion of the drain region. Spacers are along a portion of the topmost portion of the protrusion. The TFET further includes a drain contact coupled to the drain region, a gate contact coupled to the gate stack, and a source contact coupled to the source region. The source contact has a width that is greater than a width of the source region. The source contact is disposed on the source region and a portion of the spacers.

公开(公告)号：US10164076B2

公开(公告)日：2018-12-25

申请号：US15392579

申请日：2016-12-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Harry-Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Chi-Wen Liu ,  Ming Zhu

IPC分类号： H01L29/66 ,  H01L21/336 ,  H01L21/332 ,  H01L21/8238 ,  H01L29/739 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/324 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

摘要： A method for forming a tunneling field-effect transistor (TFET) is disclosed. The method includes etching a semiconductor substrate to form a semiconductor protrusion that protrudes out from a top surface of the semiconductor substrate, forming a drain region in lower portion of the semiconductor protrusion, and patterning a gate stack layer to form a gate stack. The gate stack has a gating surface that directly contacts and wraps around a middle portion of the semiconductor protrusion. The method further includes forming a source region in an upper portion of the semiconductor protrusion and forming a source contact over the source region, the source contact have a first width that is larger than a width of the source region.

公开(公告)号：US20170110559A1

公开(公告)日：2017-04-20

申请号：US15392579

申请日：2016-12-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Harry-Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Chi-Wen Liu ,  Ming Zhu

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/265 ,  H01L29/423 ,  H01L29/06

CPC分类号： H01L29/66977 ,  H01L21/26513 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/42392 ,  H01L29/66356 ,  H01L29/66666 ,  H01L29/66742 ,  H01L29/7391 ,  H01L29/78618 ,  H01L29/78642

摘要： A method for forming a tunneling field-effect transistor (TFET) is disclosed. The method includes etching a semiconductor substrate to form a semiconductor protrusion that protrudes out from a top surface of the semiconductor substrate, forming a drain region in lower portion of the semiconductor protrusion, and patterning a gate stack layer to form a gate stack. The gate stack has a gating surface that directly contacts and wraps around a middle portion of the semiconductor protrusion. The method further includes forming a source region in an upper portion of the semiconductor protrusion and forming a source contact over the source region, the source contact have a first width that is larger than a width of the source region.