公开(公告)号：US20240377764A1

公开(公告)日：2024-11-14

申请号：US18781721

申请日：2024-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu TU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/00 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US20210059036A1

公开(公告)日：2021-02-25

申请号：US16548731

申请日：2019-08-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu TU ,  Han-Lung CHANG ,  Hsiao-Lun CHANG ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00

Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.

公开(公告)号：US20210298161A1

公开(公告)日：2021-09-23

申请号：US17338441

申请日：2021-06-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu TU ,  Han-Lung CHANG ,  Hsiao-Lun CHANG ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00

Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.

公开(公告)号：US20230375938A1

公开(公告)日：2023-11-23

申请号：US18366092

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hao LAI ,  Ming-Hsun TSAI ,  Hsin-Feng CHEN ,  Wei-Shin CHENG ,  Yu-Kuang SUN ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Shih-Yu TU ,  Jou-Hsuan LU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/00

CPC classification number: G03F7/70033

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

公开(公告)号：US20220334495A1

公开(公告)日：2022-10-20

申请号：US17494558

申请日：2021-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hao LAI ,  Ming-Hsun TSAI ,  Hsin-Feng CHEN ,  Wei-Shin CHENG ,  Yu-Kuang SUN ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Shih-Yu TU ,  Jou-Hsuan LU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

公开(公告)号：US20230296992A1

公开(公告)日：2023-09-21

申请号：US18324889

申请日：2023-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu TU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  H05G2/00

CPC classification number: G03F7/7085 ,  H05G2/008 ,  H05G2/005 ,  G03F7/70033 ,  G03F7/70925 ,  G03F7/70916

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US20220299883A1

公开(公告)日：2022-09-22

申请号：US17484945

申请日：2021-09-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu TU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin Liu

IPC: G03F7/20 ,  G01N15/06 ,  H05G2/00 ,  B08B5/02 ,  B08B7/00 ,  B08B13/00 ,  B08B7/04 ,  B08B3/08

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.