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公开(公告)号：US11079669B2
公开(公告)日：2021-08-03
申请号：US16728026
申请日：2019-12-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tzu-Ting Chou , Chung-Hsuan Liu , Kuan-Wen Lin , Chi-Lun Lu , Ting-Hao Hsu , Sheng-Chi Chin
Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
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公开(公告)号：US20190033720A1
公开(公告)日：2019-01-31
申请号：US15861156
申请日：2018-01-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shinn-Sheng Yu , Ching-Fang Yu , Wen-Chuan Wang , Ting-Hao Hsu , Sheng-Chi Chin , Anthony Yen
Abstract: An extreme ultraviolet lithography method is disclosed. In an example, the EUVL method includes forming a resist layer on a substrate; performing a first exposure process to image a first pattern of a first sub-region of a first mask to the resist layer; performing a second exposure process to image a second pattern of a second sub-region of the first mask to the resist layer; and performing a third exposure process to image a third pattern of a first sub-region of a second mask to the resist layer. The second and third patterns are identical to the first pattern. The first, second and third exposure processes collectively form a latent image of the first pattern on the resist layer.
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公开(公告)号：US20210208505A1
公开(公告)日：2021-07-08
申请号：US17206722
申请日：2021-03-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shinn-Sheng Yu , Ching-Fang Yu , Wen-Chuan Wang , Ting-Hao Hsu , Sheng-Chi Chin , Anthony Yen
Abstract: An extreme ultraviolet lithography method is disclosed. In an example, the EUVL method includes forming a resist layer on a substrate; performing a first exposure process to image a first pattern of a first sub-region of a first mask to the resist layer; performing a second exposure process to image a second pattern of a second sub-region of the first mask to the resist layer; and performing a third exposure process to image a third pattern of a first sub-region of a second mask to the resist layer. The second and third patterns are identical to the first pattern. The first, second and third exposure processes collectively form a latent image of the first pattern on the resist layer.
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公开(公告)号：US20200150523A1
公开(公告)日：2020-05-14
申请号：US16728026
申请日：2019-12-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tzu-Ting Chou , Chung-Hsuan Liu , Kuan-Wen Lin , Chi-Lun Lu , Ting-Hao Hsu , Sheng-Chi Chin
Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
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公开(公告)号：US10955746B2
公开(公告)日：2021-03-23
申请号：US15861156
申请日：2018-01-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shinn-Sheng Yu , Ching-Fang Yu , Wen-Chuan Wang , Ting-Hao Hsu , Sheng-Chi Chin , Anthony Yen
Abstract: An extreme ultraviolet lithography method is disclosed. In an example, the EUVL method includes forming a resist layer on a substrate; performing a first exposure process to image a first pattern of a first sub-region of a first mask to the resist layer; performing a second exposure process to image a second pattern of a second sub-region of the first mask to the resist layer; and performing a third exposure process to image a third pattern of a first sub-region of a second mask to the resist layer. The second and third patterns are identical to the first pattern. The first, second and third exposure processes collectively form a latent image of the first pattern on the resist layer.
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Patent Agency Ranking
公开(公告)号：US11768431B2
公开(公告)日：2023-09-26
申请号：US17094727
申请日：2020-11-10
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chih-Cheng Chen , ShinAn Ku , Ting-Hao Hsu , Hsin-Chang Lee
CPC classification number: G03F1/22 , G01B11/22 , G01B11/24 , G01J3/0208
Abstract: A method of scanning a substrate and determining scratches of the substrate includes transmitting a converging beam of light that comprises multiple wavelengths to the substrate. Each wavelength of the multiple wavelengths focuses at a different distance in a focus interval around and including a surface of the substrate. The method also includes receiving reflected light from the surface of the substrate and determining a height or depth of the surface of the substrate based on a wavelength of the reflected light having a highest intensity.
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公开(公告)号：US20180031962A1
公开(公告)日：2018-02-01
申请号：US15223587
申请日：2016-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tzu-Ting Chou , Chung-Hsuan Liu , Kuan-Wen Lin , Chi-Lun Lu , Ting-Hao Hsu , Sheng-Chi Chin
CPC classification number: G03F1/22 , B08B3/08 , B08B3/10 , B08B7/0035 , B08B7/0042 , G03F1/62 , G03F1/82
Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
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公开(公告)号：US11722099B2
公开(公告)日：2023-08-08
申请号：US17871824
申请日：2022-07-22
Inventor： Jenn-Gwo Hwu , Ting-Hao Hsu
Abstract: A device includes a substrate, a first electrode and a second electrode. The first electrode is disposed on the substrate, and configured to receive an input signal. The second electrode is disposed on the substrate, and configured to output an output signal based on the input signal. When the input signal is configured to oscillate within a first range between a first voltage value and a second voltage value with a first frequency, the output signal is an inverted version of the input signal, and has the first frequency. When the input signal is configured to oscillate within a second range including the first voltage value without the second voltage value with the first frequency, the output signal has a second frequency which is approximately twice of the first frequency.
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公开(公告)号：US11411535B2
公开(公告)日：2022-08-09
申请号：US17206000
申请日：2021-03-18
Inventor： Jenn-Gwo Hwu , Ting-Hao Hsu
Abstract: A device is disclosed that includes an insulating layer, a first electrode, a second electrode, and a bottom electrode. The insulating layer is disposed on a first surface of a substrate. The first electrode and the second electrode are disposed on a first surface of the insulating layer. The first electrode receives an input signal, and the second electrode outputs, in response to the input signal, an output signal. The bottom electrode is disposed on a second surface, opposite to the first surface, of the substrate and receives an operating voltage to modify a frequency of the output signal.
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公开(公告)号：US10958216B2
公开(公告)日：2021-03-23
申请号：US16548741
申请日：2019-08-22
Inventor： Jenn-Gwo Hwu , Ting-Hao Hsu
Abstract: A device is disclosed that includes a semiconductor substrate, a bottom electrode disposed on a first surface of the semiconductor substrate, an insulating layer disposed on a second surface that is opposite to the first surface, of the semiconductor substrate, a current-to-voltage converter, a first electrode and a second electrode that are separate from each other and disposed on the insulating layer. The first electrode is configured to be applied with an input signal, and the second electrode is configured to output an output current signal that is associated with the input signal, the input signal is configured to have a voltage level that is variable, and the output current signal is configured to have a peak current value and a valley current value. The current-to-voltage converter is configured to receive the output current signal to generate an output voltage signal.
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