公开(公告)号：US20210313195A1

公开(公告)日：2021-10-07

申请号：US16837381

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ching HSU ,  Yu-Huan CHEN ,  Chen-Shien CHEN

IPC: H01L21/48 ,  H01L23/498 ,  H01L23/00

Abstract: A method for forming a chip package structure is provided. The method includes providing a wiring substrate including a substrate, a pad, and a polymer layer. The polymer layer is over the substrate and the pad, and the polymer layer has a first opening exposing the pad. The method includes forming a conductive adhesive layer over the polymer layer and the pad. The conductive adhesive layer is in direct contact with and conformally covers the polymer layer and the pad. The method includes forming a nickel layer over the conductive adhesive layer. The nickel layer is thicker than the conductive adhesive layer, and the nickel layer and the conductive adhesive layer are made of different materials. The method includes bonding a chip to the wiring substrate through a conductive bump. The conductive bump is between the nickel layer and the chip.

公开(公告)号：US20210066181A1

公开(公告)日：2021-03-04

申请号：US16893467

申请日：2020-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Huan CHEN ,  Kuo-Ching HSU ,  Chen-Shien CHEN

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

Abstract: A method for forming a chip package structure is provided. The method includes providing a wiring substrate. The method includes sequentially forming a nickel-containing layer and a gold-containing layer over the first pad. The method includes forming a conductive protection layer covering the gold-containing layer over the nickel-containing layer. The method includes bonding a chip to the wiring substrate through a conductive bump and a flux layer surrounding the conductive bump. The conductive bump is between the second pad and the chip. The method includes removing the flux layer while the conductive protection layer covers the nickel-containing layer.

公开(公告)号：US20230189422A1

公开(公告)日：2023-06-15

申请号：US18064858

申请日：2022-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang SUN ,  Cheng-Hao LAI ,  Yu-Huan CHEN ,  Wei-Shin CHENG ,  Ming-Hsun TSAI ,  Hsin-Feng CHEN ,  Chiao-Hua CHENG ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H05G2/00 ,  G03F7/20

CPC classification number: H05G2/006 ,  G03F7/70033 ,  H05G2/005 ,  H05G2/008

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

公开(公告)号：US20220338334A1

公开(公告)日：2022-10-20

申请号：US17233220

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang SUN ,  Cheng-Hao LAI ,  Yu-Huan CHEN ,  Wei-Shin CHENG ,  Ming-Hsun TSAI ,  Hsin-Feng CHEN ,  Chiao-Hua CHENG ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H05G2/00 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.