公开(公告)号：US12013645B2

公开(公告)日：2024-06-18

申请号：US17715048

申请日：2022-04-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Christine Y Ouyang

IPC分类号： G03F7/42 ,  G03F7/00 ,  G03F7/004 ,  G03F7/027 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/528

CPC分类号： G03F7/427 ,  G03F7/0043 ,  G03F7/027 ,  G03F7/70033 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/5283 ,  H01L24/09 ,  H01L24/17 ,  H01L24/19 ,  H01L2224/023 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/92244

摘要： A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.

公开(公告)号：US20240288776A1

公开(公告)日：2024-08-29

申请号：US18655318

申请日：2024-05-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Christine Y Ouyang

IPC分类号： G03F7/42 ,  G03F7/00 ,  G03F7/004 ,  G03F7/027 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/528

CPC分类号： G03F7/427 ,  G03F7/0043 ,  G03F7/027 ,  G03F7/70033 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/5283 ,  H01L24/09 ,  H01L24/17 ,  H01L24/19 ,  H01L2224/023 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/92244

摘要： A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.

公开(公告)号：US11908701B2

公开(公告)日：2024-02-20

申请号：US17238170

申请日：2021-04-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Christine Y Ouyang ,  Li-Te Lin

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L21/31116 ,  H01L21/02118 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76895

摘要： A patterning method includes at least the following steps. A first material layer is provided. A second material layer is provided over the first material layer. The second material layer partially exposes the first material layer. A passivation layer is formed over the first material layer and the second material layer. A growth rate of the passivation layer on the second material layer is greater than a growth rate of the passivation layer on the first material layer. A first etching process is performed to remove a portion of the passivation layer and a portion of the first material layer.