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    PAD STRUCTURE LAYOUT FOR SEMICONDUCTOR DEVICE
    2.
    发明申请
    PAD STRUCTURE LAYOUT FOR SEMICONDUCTOR DEVICE 有权
    半导体器件的PAD结构布局

    公开(公告)号：US20150001658A1

    公开(公告)日：2015-01-01

    申请号：US13929172

    申请日：2013-06-27

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Shang-Yen Wu ,  I-Chih Chen ,  Yi-Sheng Liu ,  Volume Chien ,  Fu-Tsun Tsai ,  Chi-Cherng Jeng ,  Ying-Hao Chen

    IPC分类号： H01L31/02

    CPC分类号： H01L27/1464 ,  H01L24/05 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/13091 ,  H01L2924/00

    摘要： A semiconductor device including a light sensing region disposed on a substrate is provided that includes a bond structure having one or more patterned layers underlying the pad element. The pad element may be coupled to the light sensing region and may be formed in a first metal layer disposed on the substrate. A second metal layer of the device has a first bond region, a region of the second metal layer that underlies the pad element. This first bond region of the second metal layer includes a pattern of a plurality of conductive lines interposed by dielectric. A via connects the pad element and the second metal layer.

    摘要翻译： 提供了一种包括设置在基板上的光感测区域的半导体器件，其包括在衬垫元件下方具有一个或多个图案化层的接合结构。 焊盘元件可以耦合到光感测区域，并且可以形成在设置在衬底上的第一金属层中。 器件的第二金属层具有第一结合区域，第二金属层的位于衬垫元件下面的区域。 第二金属层的该第一接合区域包括插入介电体的多个导电线图案。 通孔连接垫元件和第二金属层。

    Image sensor having stress releasing structure and method of forming same
    3.
    发明授权
    Image sensor having stress releasing structure and method of forming same 有权

    公开(公告)号：US11569289B2

    公开(公告)日：2023-01-31

    申请号：US17410666

    申请日：2021-08-24

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Yun-Wei Cheng ,  Chun-Wei Chia ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

    IPC分类号： H01L27/146 ,  H01L23/00

    摘要： A semiconductor structure includes a substrate having a pixel array region and a first seal ring region, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region includes a first seal ring. The semiconductor structure further includes a first isolation feature in the first seal ring region, wherein the first isolation feature is filled with a dielectric material, and the first isolation feature is a continuous structure surrounding the pixel array region. The semiconductor structure further includes a second isolation feature between the first isolation feature and the pixel array region, wherein the second isolation feature is filled with the dielectric material.

    Bonding Pad on a Back Side Illuminated Image Sensor
    6.
    发明申请
    Bonding Pad on a Back Side Illuminated Image Sensor 有权

    公开(公告)号：US20210273009A1

    公开(公告)日：2021-09-02

    申请号：US17322769

    申请日：2021-05-17

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Volume Chien ,  I-Chih Chen ,  Hsin-Chi Chen ,  Hung-Ta Huang ,  Ying-Hao Chen ,  Ying-Lang Wang

    IPC分类号： H01L27/146 ,  H01L23/00 ,  H01L21/764

    摘要： A bonding pad structure comprises an interconnect layer, an isolation layer over the interconnect layer, a conductive pad, and one or more non-conducting stress-releasing structures. The conductive pad comprises a planar portion over the isolation layer, and one or more bridging portions extending through at least the isolation layer and to the interconnect layer for establishing electric contact therewith, wherein there is a trench in the one or more bridging portions. The one or more non-conducting stress-releasing structures are disposed between the isolation layer and the conductive pad. The trench is surrounded by one of the one or more non-conducting stress-releasing structures from a top view.

    Image sensor having stress releasing structure and method of forming same
    7.
    发明授权
    Image sensor having stress releasing structure and method of forming same 有权

    公开(公告)号：US10985199B2

    公开(公告)日：2021-04-20

    申请号：US16591891

    申请日：2019-10-03

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen ,  Chun-Wei Chia

    IPC分类号： H01L27/146 ,  H01L23/00

    摘要： A semiconductor structure includes a sensor wafer comprising a plurality of sensor chips on and within a substrate. Each of the plurality of sensor chips includes a pixel array region, a bonding pad region, and a periphery region. The periphery region is between adjacent to a scribe line, and the scribe line is between adjacent sensor chips of the plurality of sensor chips. Each of the plurality of sensor chips further includes a stress-releasing trench structure embedded in the substrate, wherein the stress-releasing trench structure is in the periphery region, and the stress-releasing trench structure fully surrounds a perimeter of the pixel array region and the bonding pad region of a corresponding sensor chip of the plurality of sensor chips.