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    Image Sensor Having Enhanced Backside Illumination Quantum Efficiency
    1.
    发明申请
    Image Sensor Having Enhanced Backside Illumination Quantum Efficiency 审中-公开
    具有增强的背光照明量子效率的图像传感器

    公开(公告)号：US20150279886A1

    公开(公告)日：2015-10-01

    申请号：US14721375

    申请日：2015-05-26

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14629 ,  H01L21/76829 ,  H01L21/76831 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14685 ,  H04N3/155

    摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.

    摘要翻译： 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域和逻辑区域的基板。 在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。 硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触 逻辑区域。 在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。 当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

    Backside depletion for backside illuminated image sensors
    2.
    发明授权
    Backside depletion for backside illuminated image sensors 有权
    背面照明图像传感器的背面耗尽

    公开(公告)号：US08759141B2

    公开(公告)日：2014-06-24

    申请号：US13875659

    申请日：2013-05-02

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

    IPC分类号： H01L21/00

    CPC分类号： H01L31/0232 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

    摘要： A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

    摘要翻译： 提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域， 耗尽区的深度小于衬底厚度的20％。

    Image sensor having enhanced backside illumination quantum efficiency
    5.
    发明授权
    Image sensor having enhanced backside illumination quantum efficiency 有权

    公开(公告)号：US10269848B2

    公开(公告)日：2019-04-23

    申请号：US15583278

    申请日：2017-05-01

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    IPC分类号： H01L27/146 ,  H04N3/14 ,  H01L21/768

    摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.

    Crosstalk Improvement Through P on N Structure for Image Sensor
    7.
    发明申请
    Crosstalk Improvement Through P on N Structure for Image Sensor 有权
    通过P对图像传感器的N结构进行串扰改进

    公开(公告)号：US20170033138A1

    公开(公告)日：2017-02-02

    申请号：US15295659

    申请日：2016-10-17

    申请人： Taiwan Semiconductor Manufacturing Company., Ltd.

    发明人： Chung-Wei Chang ,  Han-Chi Liu ,  Chun-Yao Ko ,  Shou-Gwo Wuu

    IPC分类号： H01L27/146 ,  H01L21/761

    CPC分类号： H01L27/1463 ,  H01L21/761 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035272

    摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; a photo-sensitive structure formed in the semiconductor layer; a multi-layer interconnect (MLI) structure disposed on the semiconductor layer; a color filter disposed on the MLI structure and disposed above the photo-sensitive structure; and a microlens disposed over the color filter and disposed above the photo-sensitive structure.

    摘要翻译： 本公开提供了一种图像传感器半导体器件。 半导体器件包括具有第一类掺杂剂的半导体衬底; 半导体层，其具有不同于所述第一类型掺杂剂的第二类型的掺杂剂并且设置在所述半导体衬底上; 形成在所述半导体层中的感光结构; 设置在所述半导体层上的多层互连（MLI）结构; 设置在MLI结构上并设置在感光结构之上的滤色器; 以及设置在滤色器上并设置在感光结构之上的微透镜。