公开(公告)号：US20230369152A1

公开(公告)日：2023-11-16

申请号：US18356243

申请日：2023-07-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L23/3121 ,  H01L21/565 ,  H01L24/03 ,  H01L23/3171 ,  H01L24/09 ,  H01L2924/1811 ,  H01L2224/02379 ,  H01L25/0756

摘要： A package includes a die, first conductive structures, second conductive structures, and an encapsulant. The die has a rear surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns. At least one of the second conductive structures is closer to the die than the first conductive structures. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures.

公开(公告)号：US12051634B2

公开(公告)日：2024-07-30

申请号：US18356243

申请日：2023-07-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065 ,  H01L25/07 ,  H01L25/075 ,  H01L25/11

CPC分类号： H01L23/3121 ,  H01L21/565 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/09 ,  H01L24/23 ,  H01L24/25 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/0756 ,  H01L25/117 ,  H01L2224/02379 ,  H01L2224/2105 ,  H01L2224/2205 ,  H01L2224/23 ,  H01L2224/2401 ,  H01L2224/2405 ,  H01L2224/2505 ,  H01L2225/1011 ,  H01L2225/1047 ,  H01L2225/1058 ,  H01L2924/1811

摘要： A package includes a die, first conductive structures, second conductive structures, and an encapsulant. The die has a rear surface. The first conductive structures and the second conductive structures surround the die. The first conductive structures include cylindrical columns and the second conductive structures include elliptical columns. At least one of the second conductive structures is closer to the die than the first conductive structures. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures.

公开(公告)号：US11133400B2

公开(公告)日：2021-09-28

申请号：US16417780

申请日：2019-05-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Kuo-Hui Chang ,  Yi-Cheng Chao

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

摘要： Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.

公开(公告)号：US11756849B2

公开(公告)日：2023-09-12

申请号：US17834938

申请日：2022-06-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC分类号： H01L23/31 ,  H01L23/535 ,  H01L25/065 ,  H01L25/07 ,  H01L25/11 ,  H01L25/10 ,  H01L21/56 ,  H01L23/00 ,  H01L25/075

CPC分类号： H01L23/3121 ,  H01L21/565 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/09 ,  H01L24/23 ,  H01L24/25 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/0756 ,  H01L25/117 ,  H01L2224/02379 ,  H01L2224/2105 ,  H01L2224/2205 ,  H01L2224/23 ,  H01L2224/2401 ,  H01L2224/2405 ,  H01L2224/2505 ,  H01L2225/1011 ,  H01L2225/1047 ,  H01L2225/1058 ,  H01L2924/1811

摘要： A package includes a die, first conductive structures, second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. A shape of the first conductive structures is different a shape of the second conductive structures. The second conductive structures include elliptical columns having straight sidewalls. A distance between the first conductive structure that is closest to the die and the die is greater than a distance between the second conductive structure that is closest to the die and the die. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

公开(公告)号：US20190334016A1

公开(公告)日：2019-10-31

申请号：US16505917

申请日：2019-07-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Kuo-Hui Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/66 ,  H01L29/78

摘要： Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.

公开(公告)号：US20220301964A1

公开(公告)日：2022-09-22

申请号：US17834938

申请日：2022-06-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/00

摘要： A package includes a die, first conductive structures, second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. A shape of the first conductive structures is different a shape of the second conductive structures. The second conductive structures include elliptical columns having straight sidewalls. A distance between the first conductive structure that is closest to the die and the die is greater than a distance between the second conductive structure that is closest to the die and the die. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

公开(公告)号：US20190305113A1

公开(公告)日：2019-10-03

申请号：US16417780

申请日：2019-05-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Kuo-Hui Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/66 ,  H01L29/78

摘要： Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.

公开(公告)号：US11444176B2

公开(公告)日：2022-09-13

申请号：US16505917

申请日：2019-07-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-Wei Chang ,  Kuo-Hui Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/49

摘要： Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.